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Title: Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

Abstract

Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

Inventors:
; ;
Issue Date:
Research Org.:
MicroLink Devices, Inc., Niles, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600452
Patent Number(s):
10,522,363
Application Number:
16/044,479
Assignee:
MicroLink Devices, Inc. (Niles, IL)
DOE Contract Number:  
AR0000446
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/24/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Youtsey, Christopher, McCarthy, Robert Fabian, and Reddy, Rekha. Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer. United States: N. p., 2019. Web.
Youtsey, Christopher, McCarthy, Robert Fabian, & Reddy, Rekha. Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer. United States.
Youtsey, Christopher, McCarthy, Robert Fabian, and Reddy, Rekha. Tue . "Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer". United States. https://www.osti.gov/servlets/purl/1600452.
@article{osti_1600452,
title = {Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer},
author = {Youtsey, Christopher and McCarthy, Robert Fabian and Reddy, Rekha},
abstractNote = {Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}

Patent:

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Works referenced in this record:

Photoelectrochemical wet etching of group III nitrides
patent, June 1998


Manufacturable thin film gallium and nitrogen containing devices
patent, May 2017