Atomic layer etching with pulsed plasmas

Donnelly, Vincent M.; Economou, Demetre J.

Title: Atomic layer etching with pulsed plasmas

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Abstract

A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

Inventors:: Donnelly, Jr., Vincent M.; Economou, Demetre J.

Issue Date:: 2019-12-24

Research Org.:: Univ. of Houston, TX (United States)

Sponsoring Org.:: USDOE; National Science Foundation (NSF)

OSTI Identifier:: 1600433

Patent Number(s):: 10515782

Application Number:: 15/949,274

Assignee:: University of Houston (Houston, TX)

DOE Contract Number:: CBET-0903426; PS02-09ER09-01

Resource Type:: Patent

Resource Relation:: Patent File Date: 04/10/2018

Country of Publication:: United States

Language:: English

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                    Donnelly, Jr., Vincent M., and Economou, Demetre J. Atomic layer etching with pulsed plasmas.  United States: N. p., 2019. 
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                    Donnelly, Jr., Vincent M., & Economou, Demetre J. Atomic layer etching with pulsed plasmas.  United States.

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                    Donnelly, Jr., Vincent M., and Economou, Demetre J. Tue .  
        "Atomic layer etching with pulsed plasmas".  United States.  https://www.osti.gov/servlets/purl/1600433.

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@article{osti_1600433,

  title        = {Atomic layer etching with pulsed plasmas},

  author       = {Donnelly, Jr., Vincent M. and Economou, Demetre J.},

  abstractNote = {A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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