Atomic layer etching with pulsed plasmas

Donnelly, Vincent M.; Economou, Demetre J.

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Title: Atomic layer etching with pulsed plasmas

Abstract

A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

Inventors:: Donnelly, Jr., Vincent M.; Economou, Demetre J.

Issue Date:: 2019-12-24

Research Org.:: Univ. of Houston, TX (United States)

Sponsoring Org.:: USDOE; National Science Foundation (NSF)

OSTI Identifier:: 1600433

Patent Number(s):: 10515782

Application Number:: 15/949,274

Assignee:: University of Houston (Houston, TX)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J37/32036 - {AC powered}
H01J37/32045 - {Circuits specially adapted for controlling the glow discharge}
H01J37/32082 - {Radio frequency generated discharge
H01J37/32146 - {Amplitude modulation, includes pulsing}
H01J37/32174 - {Circuits specially adapted for controlling the RF discharge}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/30655 - {comprising alternated and repeated etching and passivation steps, e.g. Bosch process}

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DOE Contract Number:: CBET-0903426; PS02-09ER09-01

Resource Type:: Patent

Resource Relation:: Patent File Date: 04/10/2018

Country of Publication:: United States

Language:: English

Citation Formats


                    Donnelly, Jr., Vincent M., and Economou, Demetre J. Atomic layer etching with pulsed plasmas.  United States: N. p., 2019. 
        Web.

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                    Donnelly, Jr., Vincent M., & Economou, Demetre J. Atomic layer etching with pulsed plasmas.  United States.

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                    Donnelly, Jr., Vincent M., and Economou, Demetre J. Tue .  
        "Atomic layer etching with pulsed plasmas".  United States.  https://www.osti.gov/servlets/purl/1600433.

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@article{osti_1600433,

  title        = {Atomic layer etching with pulsed plasmas},

  author       = {Donnelly, Jr., Vincent M. and Economou, Demetre J.},

  abstractNote = {A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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Works referenced in this record:

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Gopalraja, Praburam; Forster, John C.
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Similar Records

Title: Atomic layer etching with pulsed plasmas

Abstract

Citation Formats

Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage patent, February 2001

Apparatus for monitoring substrate biasing during plasma processing of a substrate patent, April 2002

Exhaust Assembly for a Plasma Processing System patent-application, December 2008

Plasma processing apparatus patent, November 1996

Method of Processing a Surface of a Workpiece patent-application, May 2004

Plasma Surface Treatment System and Plasma Surface Treatment Method patent-application, December 2004

Plasma atomic layer etching using conventional plasma equipment journal, January 2009

Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system patent, May 2001

Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power patent, October 2001

Plasma Processing Reactor with Multiple Capacitive and Inductive Power Sources patent-application, August 2007

Plasma assisted processing chamber with separate control of species density patent, March 2002

Integrated Capacitive and Inductive Power for a Plasma Etching Chamber patent-application, August 2007

Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
patent, February 2001

Apparatus for monitoring substrate biasing during plasma processing of a substrate
patent, April 2002

Exhaust Assembly for a Plasma Processing System
patent-application, December 2008

Plasma processing apparatus
patent, November 1996

Method of Processing a Surface of a Workpiece
patent-application, May 2004

Plasma Surface Treatment System and Plasma Surface Treatment Method
patent-application, December 2004

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patent, October 2001

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patent-application, August 2007

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patent-application, August 2007