Title: High current density, low contact resistance wide bandgap contacts

Abstract

A high current density, low contact resistance contact for wide bandgap (WBG) or ultra-wide bandgap materials (UWBG) is disclosed. The contact is lithographically formed so that a total perimeter length of the contact structure is at least twice the length of the side of a contact pad closest to the gate in a high electron mobility transistor (HEMT). The contact structure may take the form of a plurality of columns having various cross-sectional shapes, or may take the form of a convoluted geometrical shape, such as a comb-like, serpentine, or spiral shape. The depth of the contact structure permits direct contact with the two-dimensional electron gas (2DEG) in the HEMT by the perimeter of the contact structure. The contact structure is formed of at least one metal layer, at least one doped material regrown layer, or at least one implanted region. The contact structure may be applied to other WBG and UWBG devices.

Inventors:

Douglas, Erica Ann; Baca, Albert G.; Reza, Shahed; Henry, Michael David

Issue Date:

Tue Dec 10 00:00:00 EST 2019

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1600393

Patent Number(s):

10505031

Application Number:

16/175,085

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0843 - {Source or drain regions of field-effect devices}
H01L29/1029 - {of field-effect transistors}
H01L29/2003 - {Nitride compounds}
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/41766 - {with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
H01L29/432 - {Heterojunction gate for field effect devices}
H01L29/66462 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}

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DOE Contract Number:  

NA0003525

Resource Type:

Patent

Resource Relation:

Patent File Date: 10/30/2018

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE