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Title: High current density, low contact resistance wide bandgap contacts

Abstract

A high current density, low contact resistance contact for wide bandgap (WBG) or ultra-wide bandgap materials (UWBG) is disclosed. The contact is lithographically formed so that a total perimeter length of the contact structure is at least twice the length of the side of a contact pad closest to the gate in a high electron mobility transistor (HEMT). The contact structure may take the form of a plurality of columns having various cross-sectional shapes, or may take the form of a convoluted geometrical shape, such as a comb-like, serpentine, or spiral shape. The depth of the contact structure permits direct contact with the two-dimensional electron gas (2DEG) in the HEMT by the perimeter of the contact structure. The contact structure is formed of at least one metal layer, at least one doped material regrown layer, or at least one implanted region. The contact structure may be applied to other WBG and UWBG devices.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600393
Patent Number(s):
10505031
Application Number:
16/175,085
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/30/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Douglas, Erica Ann, Baca, Albert G., Reza, Shahed, and Henry, Michael David. High current density, low contact resistance wide bandgap contacts. United States: N. p., 2019. Web.
Douglas, Erica Ann, Baca, Albert G., Reza, Shahed, & Henry, Michael David. High current density, low contact resistance wide bandgap contacts. United States.
Douglas, Erica Ann, Baca, Albert G., Reza, Shahed, and Henry, Michael David. Tue . "High current density, low contact resistance wide bandgap contacts". United States. https://www.osti.gov/servlets/purl/1600393.
@article{osti_1600393,
title = {High current density, low contact resistance wide bandgap contacts},
author = {Douglas, Erica Ann and Baca, Albert G. and Reza, Shahed and Henry, Michael David},
abstractNote = {A high current density, low contact resistance contact for wide bandgap (WBG) or ultra-wide bandgap materials (UWBG) is disclosed. The contact is lithographically formed so that a total perimeter length of the contact structure is at least twice the length of the side of a contact pad closest to the gate in a high electron mobility transistor (HEMT). The contact structure may take the form of a plurality of columns having various cross-sectional shapes, or may take the form of a convoluted geometrical shape, such as a comb-like, serpentine, or spiral shape. The depth of the contact structure permits direct contact with the two-dimensional electron gas (2DEG) in the HEMT by the perimeter of the contact structure. The contact structure is formed of at least one metal layer, at least one doped material regrown layer, or at least one implanted region. The contact structure may be applied to other WBG and UWBG devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}

Patent:

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