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Title: Radiation detector

Abstract

Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.

Inventors:
; ; ; ; ; ; ;
Issue Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600383
Patent Number(s):
10,502,842
Application Number:
15/549,935
Assignee:
Brookhaven Science Associates, LLC (Upton, NY); Norfolk State University (Norfolk, VA)
DOE Contract Number:  
AC02-98CH10886; SC0012704
Resource Type:
Patent
Resource Relation:
Patent File Date: 02/12/2016
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, and Mundle, Rajeh. Radiation detector. United States: N. p., 2019. Web.
Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, & Mundle, Rajeh. Radiation detector. United States.
Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, and Mundle, Rajeh. Tue . "Radiation detector". United States. https://www.osti.gov/servlets/purl/1600383.
@article{osti_1600383,
title = {Radiation detector},
author = {Roy, Utpal N. and James, Ralph B. and Camarda, Giuseppe and Cui, Yonggang and Hossain, Anwar and Yang, Ge and Pradhan, Aswini and Mundle, Rajeh},
abstractNote = {Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}

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Works referenced in this record:

Manufacturing of optoelectronic devices
patent, October 2006