Radiation detector
Abstract
Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600383
- Patent Number(s):
- 10502842
- Application Number:
- 15/549,935
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY); Norfolk State University (Norfolk, VA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- AC02-98CH10886; SC0012704
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/12/2016
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, and Mundle, Rajeh. Radiation detector. United States: N. p., 2019.
Web.
Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, & Mundle, Rajeh. Radiation detector. United States.
Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, and Mundle, Rajeh. Tue .
"Radiation detector". United States. https://www.osti.gov/servlets/purl/1600383.
@article{osti_1600383,
title = {Radiation detector},
author = {Roy, Utpal N. and James, Ralph B. and Camarda, Giuseppe and Cui, Yonggang and Hossain, Anwar and Yang, Ge and Pradhan, Aswini and Mundle, Rajeh},
abstractNote = {Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 10 00:00:00 EST 2019},
month = {Tue Dec 10 00:00:00 EST 2019}
}
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