Ionic floating-gate memory device
Abstract
A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1600365
- Patent Number(s):
- 10497866
- Application Number:
- 16/012,430
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/19/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING; 42 ENGINEERING
Citation Formats
Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Ionic floating-gate memory device. United States: N. p., 2019.
Web.
Fuller, Elliot James, Agarwal, Sapan, & Talin, Albert Alec. Ionic floating-gate memory device. United States.
Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Tue .
"Ionic floating-gate memory device". United States. https://www.osti.gov/servlets/purl/1600365.
@article{osti_1600365,
title = {Ionic floating-gate memory device},
author = {Fuller, Elliot James and Agarwal, Sapan and Talin, Albert Alec},
abstractNote = {A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}
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