Ionic floating-gate memory device

Fuller, Elliot James; Agarwal, Sapan; Talin, Albert Alec

Title: Ionic floating-gate memory device

Abstract

A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.

Inventors:: Fuller, Elliot James; Agarwal, Sapan; Talin, Albert Alec

Issue Date:: 2019-12-03

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1600365

Patent Number(s):: 10497866

Application Number:: 16/012,430

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):: G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C2013/0092 - {Write characterized by the shape, e.g. form, length, amplitude of the write pulse}
G11C2213/73 - Array where access device function, e.g. diode function, being merged with memorizing function of memory element
G11C13/0007 - {comprising metal oxide memory material, e.g. perovskites}
G11C13/0009 - {RRAM elements whose operation depends upon chemical change}
G11C2213/74 - Array wherein each memory cell has more than one access device
G11C13/0069 - {Writing or programming circuits or methods}
G11C2213/53 - Structure wherein the resistive material being in a transistor, e.g. gate
G11C2013/0073 - {Write using bi-directional cell biasing}
G11C7/1006 - {Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor}
G11C13/0011 - {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]}
G11C11/54 - using elements simulating biological cells, e.g. neuron
G11C2213/17 - Memory cell being a nanowire transistor

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L45/146 - {Binary metal oxides, e.g. TaOx}
H01L45/1266 - {adapted for supplying ionic species}
H01L27/2427 - {of the Ovonic threshold switching type}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C13/004 - {Reading or sensing circuits or methods}
G11C13/0016 - {comprising polymers}
G11C2213/72 - Array wherein the access device being a diode
G11C13/0033 - {Disturbance prevention or evaluation
G11C2213/79 - Array wherein the access device being a transistor

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L45/08 - {based on migration or redistribution of ionic species, e.g. anions, vacancies}
H01L45/1206 - {Three or more terminal devices, e.g. transistor like devices}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C13/003 - {Cell access}

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DOE Contract Number:: NA0003525

Resource Type:: Patent

Resource Relation:: Patent File Date: 06/19/2018

Country of Publication:: United States

Language:: English

Subject:: 97 MATHEMATICS AND COMPUTING; 42 ENGINEERING

Citation Formats


                    Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Ionic floating-gate memory device.  United States: N. p., 2019. 
        Web.

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                    Fuller, Elliot James, Agarwal, Sapan, & Talin, Albert Alec. Ionic floating-gate memory device.  United States.

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                    Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Tue .  
        "Ionic floating-gate memory device".  United States.  https://www.osti.gov/servlets/purl/1600365.

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@article{osti_1600365,

  title        = {Ionic floating-gate memory device},

  author       = {Fuller, Elliot James and Agarwal, Sapan and Talin, Albert Alec},

  abstractNote = {A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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Works referenced in this record:

Non-volatile multistate memory cell using a ferroelectric gate fet
patent, July 2000

Wang, Yang; Huang, Jenn-Hwa; Eisenbeiser, Kurt W.
US Patent Document 6,091,621
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=6091621

Electrochemical device
patent, October 2004

Armgarth, Mrten; Chen, Miaoxiang; Nilsson, David A.
US Patent Document 6,806,511
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=6806511

Modifiable gate stack memory element
patent, March 2011

Kreupl, Franz
US Patent Document 7,915,603
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=7915603

Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors
patent, August 2019

Almeida Loya, Sergio Fabian; Zubia, David; Garcia, Ernest J.
US Patent Document 10,392,243
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=10392243

Multi-state memory cell
patent, June 2009

Sandhu, Gurtej S.; Abatchev, Mirzafer K.
US Patent Document 7,547,599
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=7547599

Multi-state memory
patent, March 2008

Guterman, Daniel C.; Fong, Yupin Kawing
US Patent Document 7,345,934
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=7345934

Ion-barrier for memristors/ReRAM and methods thereof
patent, November 2017

Haase, Gaddi S.
US Patent Document 9,831,427
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9831427

Resistive memory device by substrate reduction
patent, July 2018

Bedau, Daniel
US Patent Document 10,020,346
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=10020346

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
patent, May 2012

Bertin, Claude L.; Ghenciu, Eliodor G.; Rueckes, Thomas
US Patent Document 8,183,665
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=8183665

Organic electrochemical transistors with tunable threshold voltage
patent, September 2019

Doris, Sean E.; Pierre, Adrien
US Patent Document 10,424,751
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=10424751

Tunable ionic electronic transistor
patent, October 2019

Talin, Albert Alec; El Gabaly Marquez, Farid; Fuller, Elliot James
US Patent Document 10,429,343
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=10429343

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Similar Records

Title: Ionic floating-gate memory device

Abstract

Citation Formats

Non-volatile multistate memory cell using a ferroelectric gate fet patent, July 2000

Electrochemical device patent, October 2004

Modifiable gate stack memory element patent, March 2011

Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors patent, August 2019

Multi-state memory cell patent, June 2009

Multi-state memory patent, March 2008

Ion-barrier for memristors/ReRAM and methods thereof patent, November 2017

Resistive memory device by substrate reduction patent, July 2018

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same patent, May 2012

Organic electrochemical transistors with tunable threshold voltage patent, September 2019

Tunable ionic electronic transistor patent, October 2019

Non-volatile multistate memory cell using a ferroelectric gate fet
patent, July 2000

Electrochemical device
patent, October 2004

Modifiable gate stack memory element
patent, March 2011

Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors
patent, August 2019

Multi-state memory cell
patent, June 2009

Multi-state memory
patent, March 2008

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patent, November 2017

Resistive memory device by substrate reduction
patent, July 2018

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
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patent, October 2019