Resistive switching memory device
Abstract
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600306
- Patent Number(s):
- 10483464
- Application Number:
- 15/994,589
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); The University of Chicago (Chicago, CA)
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 05/31/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING; 36 MATERIALS SCIENCE
Citation Formats
Chakrabarti, Bhaswar, Ocola, Leonidas E., Guha, Supratik, and Sonde, Sushant. Resistive switching memory device. United States: N. p., 2019.
Web.
Chakrabarti, Bhaswar, Ocola, Leonidas E., Guha, Supratik, & Sonde, Sushant. Resistive switching memory device. United States.
Chakrabarti, Bhaswar, Ocola, Leonidas E., Guha, Supratik, and Sonde, Sushant. Tue .
"Resistive switching memory device". United States. https://www.osti.gov/servlets/purl/1600306.
@article{osti_1600306,
title = {Resistive switching memory device},
author = {Chakrabarti, Bhaswar and Ocola, Leonidas E. and Guha, Supratik and Sonde, Sushant},
abstractNote = {Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {11}
}
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