skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Conductivity based on selective etch for GaN devices and applications thereof

Abstract

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Inventors:
; ;
Issue Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600226
Patent Number(s):
10458038
Application Number:
14/929,015
Assignee:
Yale University (New Haven, CT)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
SC0001134; FC26-07NT43227; FG02-07ER46387
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/30/2015
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yu, Sun, Qian, and Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States: N. p., 2019. Web.
Zhang, Yu, Sun, Qian, & Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States.
Zhang, Yu, Sun, Qian, and Han, Jung. Tue . "Conductivity based on selective etch for GaN devices and applications thereof". United States. https://www.osti.gov/servlets/purl/1600226.
@article{osti_1600226,
title = {Conductivity based on selective etch for GaN devices and applications thereof},
author = {Zhang, Yu and Sun, Qian and Han, Jung},
abstractNote = {This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

Patent:

Save / Share:

Works referenced in this record:

Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
patent, November 2001


Light emitting device and manufacturing method thereof
patent, January 2013


Conductivity based on selective etch for GaN devices and applications thereof
patent, December 2015


FinFET method and structure with embedded underlying anti-punch through layer
patent, July 2013


Method of manufacturing a perforated workpiece
patent, November 1993


Light-emitting element with porous light-emitting layers
patent, September 2007


Surface emitting laser and manufacturing method thereof
patent, April 2011


Optoelectronic device and method for manufacturing the same
patent, August 2013


Laser diode with metal-oxide upper cladding layer
patent, January 2006


Multiple quantum well semiconductor laser
patent, April 1996


Optoelectronic device and method for manufacturing the same
patent, August 2013


Optoelectronic device and method for manufacturing the same
patent, January 2013


Porous silicon photo-device capable of photoelectric conversion
patent, July 1997


Doping method
patent, August 2011