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Title: Conductivity based on selective etch for GaN devices and applications thereof

Abstract

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Inventors:
; ;
Issue Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600226
Patent Number(s):
10458038
Application Number:
14/929,015
Assignee:
Yale University (New Haven, CT)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
SC0001134; FC26-07NT43227; FG02-07ER46387
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/30/2015
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yu, Sun, Qian, and Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States: N. p., 2019. Web.
Zhang, Yu, Sun, Qian, & Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States.
Zhang, Yu, Sun, Qian, and Han, Jung. Tue . "Conductivity based on selective etch for GaN devices and applications thereof". United States. https://www.osti.gov/servlets/purl/1600226.
@article{osti_1600226,
title = {Conductivity based on selective etch for GaN devices and applications thereof},
author = {Zhang, Yu and Sun, Qian and Han, Jung},
abstractNote = {This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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