Conductivity based on selective etch for GaN devices and applications thereof
Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
- Inventors:
- Issue Date:
- Research Org.:
- Yale Univ., New Haven, CT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600226
- Patent Number(s):
- 10458038
- Application Number:
- 14/929,015
- Assignee:
- Yale University (New Haven, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25B - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS
C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS
- DOE Contract Number:
- SC0001134; FC26-07NT43227; FG02-07ER46387
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/30/2015
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Zhang, Yu, Sun, Qian, and Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States: N. p., 2019.
Web.
Zhang, Yu, Sun, Qian, & Han, Jung. Conductivity based on selective etch for GaN devices and applications thereof. United States.
Zhang, Yu, Sun, Qian, and Han, Jung. Tue .
"Conductivity based on selective etch for GaN devices and applications thereof". United States. https://www.osti.gov/servlets/purl/1600226.
@article{osti_1600226,
title = {Conductivity based on selective etch for GaN devices and applications thereof},
author = {Zhang, Yu and Sun, Qian and Han, Jung},
abstractNote = {This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}
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