Methods for creating cadmium telluride (CdTe) and related alloy film
Abstract
A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2− in solution such that a CdTe film is adherently formed directly on the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Utah, Salt Lake City, UT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600211
- Patent Number(s):
- 10,453,988
- Application Number:
- 15/614,391
- Assignee:
- University of Utah Research Foundation (Salt Lake City, UT)
- DOE Contract Number:
- EE0004946
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/05/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Hahn, Carina, Pruzan, Dennis, and Scarpulla, Michael. Methods for creating cadmium telluride (CdTe) and related alloy film. United States: N. p., 2019.
Web.
Hahn, Carina, Pruzan, Dennis, & Scarpulla, Michael. Methods for creating cadmium telluride (CdTe) and related alloy film. United States.
Hahn, Carina, Pruzan, Dennis, and Scarpulla, Michael. Tue .
"Methods for creating cadmium telluride (CdTe) and related alloy film". United States. https://www.osti.gov/servlets/purl/1600211.
@article{osti_1600211,
title = {Methods for creating cadmium telluride (CdTe) and related alloy film},
author = {Hahn, Carina and Pruzan, Dennis and Scarpulla, Michael},
abstractNote = {A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2− in solution such that a CdTe film is adherently formed directly on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}
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