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Title: Methods for creating cadmium telluride (CdTe) and related alloy film

Abstract

A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2− in solution such that a CdTe film is adherently formed directly on the substrate.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600211
Patent Number(s):
10,453,988
Application Number:
15/614,391
Assignee:
University of Utah Research Foundation (Salt Lake City, UT)
DOE Contract Number:  
EE0004946
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/05/2017
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Hahn, Carina, Pruzan, Dennis, and Scarpulla, Michael. Methods for creating cadmium telluride (CdTe) and related alloy film. United States: N. p., 2019. Web.
Hahn, Carina, Pruzan, Dennis, & Scarpulla, Michael. Methods for creating cadmium telluride (CdTe) and related alloy film. United States.
Hahn, Carina, Pruzan, Dennis, and Scarpulla, Michael. Tue . "Methods for creating cadmium telluride (CdTe) and related alloy film". United States. https://www.osti.gov/servlets/purl/1600211.
@article{osti_1600211,
title = {Methods for creating cadmium telluride (CdTe) and related alloy film},
author = {Hahn, Carina and Pruzan, Dennis and Scarpulla, Michael},
abstractNote = {A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2− in solution such that a CdTe film is adherently formed directly on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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Works referenced in this record:

CdTe devices and method of manufacturing same
patent, September 2015


Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
patent, March 2012


Optoelectronic Device
patent-application, September 2015