Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices
Abstract
Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600168
- Patent Number(s):
- 10446704
- Application Number:
- 14/984,512
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/30/2015
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Mankad, Ravin. Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. United States: N. p., 2019.
Web.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., & Mankad, Ravin. Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. United States.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Mankad, Ravin. Tue .
"Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1600168.
@article{osti_1600168,
title = {Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices},
author = {Gershon, Talia S. and Gunawan, Oki and Haight, Richard A. and Mankad, Ravin},
abstractNote = {Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}