Title: Heterogeneous material integration through guided lateral growth

Abstract

Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.

Inventors:

Han, Jung

Issue Date:

2019-10-08

Research Org.:

Yale Univ., New Haven, CT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1576438

Patent Number(s):

10435812

Application Number:

14/379,088

Assignee:

Yale University (New Haven, CT)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/16 - Controlling or regulating
C30B25/186 - {being specially pre-treated by, e.g. chemical or physical means}
C30B25/22 - Sandwich processes
C30B29/406 - {Gallium nitride}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02439 - {Materials}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02623 - {Liquid deposition}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02647 - {Lateral overgrowth}

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DOE Contract Number:  

SC0001134

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Feb 19

Country of Publication:

United States

Language:

English