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Title: Heterogeneous material integration through guided lateral growth

Abstract

Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.

Inventors:
Issue Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576438
Patent Number(s):
10435812
Application Number:
14/379,088
Assignee:
Yale University (New Haven, CT)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
SC0001134
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Feb 19
Country of Publication:
United States
Language:
English

Citation Formats

Han, Jung. Heterogeneous material integration through guided lateral growth. United States: N. p., 2019. Web.
Han, Jung. Heterogeneous material integration through guided lateral growth. United States.
Han, Jung. Tue . "Heterogeneous material integration through guided lateral growth". United States. https://www.osti.gov/servlets/purl/1576438.
@article{osti_1576438,
title = {Heterogeneous material integration through guided lateral growth},
author = {Han, Jung},
abstractNote = {Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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Works referenced in this record:

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Large-area, laterally-grown epitaxial semiconductor layers
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