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Title: Localized electron beam induced deposition of silicon carbide

Abstract

A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an electron beam into the vacuum chamber onto to the surface of the substrate. The electron beam dissociates the gaseous silicon-carbide precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a silicon-carbide film.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576421
Patent Number(s):
10,395,923
Application Number:
15/729,853
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Oct 11
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Martin, Aiden Alexander. Localized electron beam induced deposition of silicon carbide. United States: N. p., 2019. Web.
Martin, Aiden Alexander. Localized electron beam induced deposition of silicon carbide. United States.
Martin, Aiden Alexander. Tue . "Localized electron beam induced deposition of silicon carbide". United States. https://www.osti.gov/servlets/purl/1576421.
@article{osti_1576421,
title = {Localized electron beam induced deposition of silicon carbide},
author = {Martin, Aiden Alexander},
abstractNote = {A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an electron beam into the vacuum chamber onto to the surface of the substrate. The electron beam dissociates the gaseous silicon-carbide precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a silicon-carbide film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}

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Works referenced in this record:

Method of manufacturing passive elements using conductive polypyrrole formulations
patent, September 1999


Electron beam-induced etching
patent, September 2015


Ion beam process for deposition of highly abrasion-resistant coatings
patent, April 1996