Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides

Borisevich, Albina Y.; Jesse, Stephen; Kalinin, Sergei V.; Lupini, Andrew R.; Unocic, Raymond R.; He, Qian

Title: Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides

Abstract

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

Inventors:: Borisevich, Albina Y.; Jesse, Stephen; Kalinin, Sergei V.; Lupini, Andrew R.; Unocic, Raymond R.; He, Qian

Issue Date:: 2019-09-03

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1576390

Patent Number(s):: 10400351

Application Number:: 15/697,541

Assignee:: UT-Battelle, LLC (Oak Ridge, TN)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B1/00 - Single-crystal growth directly from the solid state
C30B19/10 - Controlling or regulating
C30B29/02 - Elements
C30B29/16 - Oxides
C30B29/32 - Titanates
C30B30/00 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2237/2802 - Transmission microscopes
H01J2237/31735 - Direct-write microstructures
H01J2237/31747 - using STM
H01J37/3005 - {Observing the objects or the point of impact on the object}
H01J37/317 - for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
H01J37/3174 - {Particle-beam lithography, e.g. electron beam lithography}

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DOE Contract Number:: AC05-00OR22725

Resource Type:: Patent

Resource Relation:: Patent File Date: 2017 Sep 07

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Borisevich, Albina Y., Jesse, Stephen, Kalinin, Sergei V., Lupini, Andrew R., Unocic, Raymond R., and He, Qian. Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides.  United States: N. p., 2019. 
        Web.

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                    Borisevich, Albina Y., Jesse, Stephen, Kalinin, Sergei V., Lupini, Andrew R., Unocic, Raymond R., & He, Qian. Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides.  United States.

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                    Borisevich, Albina Y., Jesse, Stephen, Kalinin, Sergei V., Lupini, Andrew R., Unocic, Raymond R., and He, Qian. Tue .  
        "Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides".  United States.  https://www.osti.gov/servlets/purl/1576390.

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@article{osti_1576390,

  title        = {Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides},

  author       = {Borisevich, Albina Y. and Jesse, Stephen and Kalinin, Sergei V. and Lupini, Andrew R. and Unocic, Raymond R. and He, Qian},

  abstractNote = {A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {9}

}

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Works referenced in this record:

Charged Particle Beam Apparatus and Method for Operating a Charged Particle Beam Apparatus
patent-application, October 2008

Frosien, Juergen; Banzhof, Helmut; Levin, Jacob
US Patent Application 11/923407; 20080258060
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080258060

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Title: Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides

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Citation Formats

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Charged Particle Beam Apparatus and Method for Operating a Charged Particle Beam Apparatus
patent-application, October 2008