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Title: Spintronic devices

Abstract

A monolithic reusable microwire assembly can include a substrate and an electrically conductive thin-film wire formed on the substrate. The conductive thin-film wire can include a narrow segment forming an active area. A thermally and electrically insulating barrier can be formed on the electrically conductive thin-film wire. A roughness-reducing layer can be formed on the thermally and electrically insulating barrier and can have minimal surface roughness.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576339
Patent Number(s):
10408896
Application Number:
15/920,444
Assignee:
University of Utah Research Foundation (Salt Lake City, UT)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
SC0000909
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Jamali, Shirin, and Boehme, Christoph. Spintronic devices. United States: N. p., 2019. Web.
Jamali, Shirin, & Boehme, Christoph. Spintronic devices. United States.
Jamali, Shirin, and Boehme, Christoph. Tue . "Spintronic devices". United States. https://www.osti.gov/servlets/purl/1576339.
@article{osti_1576339,
title = {Spintronic devices},
author = {Jamali, Shirin and Boehme, Christoph},
abstractNote = {A monolithic reusable microwire assembly can include a substrate and an electrically conductive thin-film wire formed on the substrate. The conductive thin-film wire can include a narrow segment forming an active area. A thermally and electrically insulating barrier can be formed on the electrically conductive thin-film wire. A roughness-reducing layer can be formed on the thermally and electrically insulating barrier and can have minimal surface roughness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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Works referenced in this record:

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
patent, August 2013


Semiconductor device and structure
patent, August 2015


Co2Fe-based heusler alloy and spintronics devices using the same
patent, May 2016