Title: Spintronic devices

Abstract

A monolithic reusable microwire assembly can include a substrate and an electrically conductive thin-film wire formed on the substrate. The conductive thin-film wire can include a narrow segment forming an active area. A thermally and electrically insulating barrier can be formed on the electrically conductive thin-film wire. A roughness-reducing layer can be formed on the thermally and electrically insulating barrier and can have minimal surface roughness.

Inventors:

Jamali, Shirin; Boehme, Christoph

Issue Date:

2019-09-10

Research Org.:

Univ. of Utah, Salt Lake City, UT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1576339

Patent Number(s):

10408896

Application Number:

15/920,444

Assignee:

University of Utah Research Foundation (Salt Lake City, UT)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/05 - specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier {multistep processes for their manufacture}
H01L51/5088 - {Carrier injection layer}
H01L2251/303 - Oxides, e.g. metal oxides
H01L51/0031 - {Testing, e.g. accelerated lifetime tests of photoelectric devices}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/549 - organic PV cells

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N24/08 - by using nuclear magnetic resonance

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0037 - {Polyethylene dioxythiophene [PEDOT] and derivatives}
H01L51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L2223/6627 - Waveguides, e.g. microstrip line, strip line, coplanar line

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01P - WAVEGUIDES

H01P3/08 - Microstrips

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2251/301 - Inorganic materials
H01L2251/558 - Thickness
H01L51/0036 - {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
H01L51/0047 - {comprising substituents, e.g. PCBM}
H01L51/5012 - {Electroluminescent [EL] layer}
H01L51/0081 - {comprising aluminium, e.g. Alq3}
H01L23/66 - High-frequency adaptations
H01L51/0096 - {Substrates}

G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES

G01R33/24 - for measuring direction or magnitude of magnetic fields or magnetic flux

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0035 - {comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline

G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES

G01R33/323 - {Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L43/08 - Magnetic-field-controlled resistors
H01L51/0038 - {Poly-phenylenevinylene and derivatives

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01P - WAVEGUIDES

H01P11/003 - {Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/413 - {Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
H01L29/66977 - {Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects}

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DOE Contract Number:  

SC0000909

Resource Type:

Patent

Country of Publication:

United States

Language:

English