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Title: Diamond based current aperture vertical transistor and methods of making and using the same

Abstract

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.

Inventors:
; ; ;
Issue Date:
Research Org.:
Arizona State Univ., Scottsdale, AZ (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576317
Patent Number(s):
10418475
Application Number:
15/824,519
Assignee:
Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ); The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000453
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Nov 28
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; 36 MATERIALS SCIENCE

Citation Formats

Chowdhury, Srabanti, Dutta, Maitreya, Nemanich, Robert, and Koeck, Franz. Diamond based current aperture vertical transistor and methods of making and using the same. United States: N. p., 2019. Web.
Chowdhury, Srabanti, Dutta, Maitreya, Nemanich, Robert, & Koeck, Franz. Diamond based current aperture vertical transistor and methods of making and using the same. United States.
Chowdhury, Srabanti, Dutta, Maitreya, Nemanich, Robert, and Koeck, Franz. Tue . "Diamond based current aperture vertical transistor and methods of making and using the same". United States. https://www.osti.gov/servlets/purl/1576317.
@article{osti_1576317,
title = {Diamond based current aperture vertical transistor and methods of making and using the same},
author = {Chowdhury, Srabanti and Dutta, Maitreya and Nemanich, Robert and Koeck, Franz},
abstractNote = {A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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