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Title: Ion trapping for quantum information processing

Abstract

A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576316
Patent Number(s):
10,418,443
Application Number:
15/424,158
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Feb 03
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING

Citation Formats

Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., and Rembetski, John F. Ion trapping for quantum information processing. United States: N. p., 2019. Web.
Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., & Rembetski, John F. Ion trapping for quantum information processing. United States.
Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., and Rembetski, John F. Tue . "Ion trapping for quantum information processing". United States. https://www.osti.gov/servlets/purl/1576316.
@article{osti_1576316,
title = {Ion trapping for quantum information processing},
author = {Nordquist, Christopher and Berry, Christopher W. and Maunz, Peter Lukas Wilhelm and Blain, Matthew G. and Sterk, Jonathan David and Resnick, Paul J. and Rembetski, John F.},
abstractNote = {A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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Works referenced in this record:

Qubit and coupler circuit structures and coupling techniques
patent, November 2018