Ion trapping for quantum information processing
Abstract
A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576316
- Patent Number(s):
- 10418443
- Application Number:
- 15/424,158
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Feb 03
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING
Citation Formats
Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., and Rembetski, John F. Ion trapping for quantum information processing. United States: N. p., 2019.
Web.
Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., & Rembetski, John F. Ion trapping for quantum information processing. United States.
Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., and Rembetski, John F. Tue .
"Ion trapping for quantum information processing". United States. https://www.osti.gov/servlets/purl/1576316.
@article{osti_1576316,
title = {Ion trapping for quantum information processing},
author = {Nordquist, Christopher and Berry, Christopher W. and Maunz, Peter Lukas Wilhelm and Blain, Matthew G. and Sterk, Jonathan David and Resnick, Paul J. and Rembetski, John F.},
abstractNote = {A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}
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