Ion-implanted thermal barrier
Abstract
Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1576315
- Patent Number(s):
- 10418304
- Application Number:
- 16/107,470
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM); University of Virginia Patent Foundation (Charlottesville, VA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2018 Aug 21
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, and Hopkins, Patrick E. Ion-implanted thermal barrier. United States: N. p., 2019.
Web.
Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, & Hopkins, Patrick E. Ion-implanted thermal barrier. United States.
Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, and Hopkins, Patrick E. Tue .
"Ion-implanted thermal barrier". United States. https://www.osti.gov/servlets/purl/1576315.
@article{osti_1576315,
title = {Ion-implanted thermal barrier},
author = {Beechem, III, Thomas Edwin and Hattar, Khalid Mikhiel and Ihlefeld, Jon and Piekos, Edward S. and Medlin, Douglas L. and Yates, Luke and Hopkins, Patrick E.},
abstractNote = {Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}
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Works referenced in this record:
Semiconductor devices having thermal spacers
patent, November 2006
- Allen, Scott; Milligan, James W.
- US Patent Document 7,135,747