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Title: Ion-implanted thermal barrier

Abstract

Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1576315
Patent Number(s):
10418304
Application Number:
16/107,470
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM); University of Virginia Patent Foundation (Charlottesville, VA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 2018 Aug 21
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, and Hopkins, Patrick E. Ion-implanted thermal barrier. United States: N. p., 2019. Web.
Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, & Hopkins, Patrick E. Ion-implanted thermal barrier. United States.
Beechem, III, Thomas Edwin, Hattar, Khalid Mikhiel, Ihlefeld, Jon, Piekos, Edward S., Medlin, Douglas L., Yates, Luke, and Hopkins, Patrick E. Tue . "Ion-implanted thermal barrier". United States. https://www.osti.gov/servlets/purl/1576315.
@article{osti_1576315,
title = {Ion-implanted thermal barrier},
author = {Beechem, III, Thomas Edwin and Hattar, Khalid Mikhiel and Ihlefeld, Jon and Piekos, Edward S. and Medlin, Douglas L. and Yates, Luke and Hopkins, Patrick E.},
abstractNote = {Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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