Apparatus for controlling heat flow within a silicon melt

Kellerman, Peter L.; Carlson, Frederick M.; Morrell, David; Moradian, Ala; Desai, Nandish

Title: Apparatus for controlling heat flow within a silicon melt

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Abstract

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Inventors:: Kellerman, Peter L.; Carlson, Frederick M.; Morrell, David; Moradian, Ala; Desai, Nandish

Issue Date:: 2019-09-17

Research Org.:: Varian Semiconductor Equipment Associates, Inc, Gloucester, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1576302

Patent Number(s):: 10415151

Assignee:: Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/06 - Silicon
C30B15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal
C30B15/34 - Edge-defined film-fed crystal-growth using dies or slits

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T117/1068 - including heating or cooling details [e.g., shield configuration]

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B15/14 - Heating of the melt or the crystallised materials
C30B15/06 - Non-vertical pulling
C30B15/24 - using mechanical means, e.g. shaping guides

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DOE Contract Number:: EE0000595

Resource Type:: Patent

Resource Relation:: Patent File Date: 2014 Mar 27

Country of Publication:: United States

Language:: English

Citation Formats


                    Kellerman, Peter L., Carlson, Frederick M., Morrell, David, Moradian, Ala, and Desai, Nandish. Apparatus for controlling heat flow within a silicon melt.  United States: N. p., 2019. 
        Web.

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                    Kellerman, Peter L., Carlson, Frederick M., Morrell, David, Moradian, Ala, & Desai, Nandish. Apparatus for controlling heat flow within a silicon melt.  United States.

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                    Kellerman, Peter L., Carlson, Frederick M., Morrell, David, Moradian, Ala, and Desai, Nandish. Tue .  
        "Apparatus for controlling heat flow within a silicon melt".  United States.  https://www.osti.gov/servlets/purl/1576302.

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@article{osti_1576302,

  title        = {Apparatus for controlling heat flow within a silicon melt},

  author       = {Kellerman, Peter L. and Carlson, Frederick M. and Morrell, David and Moradian, Ala and Desai, Nandish},

  abstractNote = {An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {9}

}

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