Title: Optical systems fabricated by printing-based assembly

Abstract

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Inventors:

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

Issue Date:

Tue Sep 24 00:00:00 EDT 2019

Research Org.:

Univ. of Illinois at Urbana-Champaign, IL (United States); X-Celeprint Ltd., Cork (Ireland)

Sponsoring Org.:

USDOE

OSTI Identifier:

1576288

Patent Number(s):

10424572

Application Number:

15/402,684

Assignee:

The Board of Trustees of the University of Illinois (Urbana, IL); X-Celeprint Limited (Cork, IE)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C2201/0185 - Printing, e.g. microcontact printing

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L2224/2919 - with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L2224/32225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/75753 - Means for optical alignment, e.g. sensors
H01L2224/75901 - using a computer, e.g. fully- or semi-automatic bonding
H01L2224/7598 - specially adapted for batch processes
H01L2224/83 - using a layer connector
H01L2224/83005 - being a temporary or sacrificial substrate
H01L2224/97 - the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
H01L24/29 - {of an individual layer connector}
H01L24/32 - {of an individual layer connector}
H01L24/72 - {Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips}
H01L24/75 - {Apparatus for connecting with bump connectors or layer connectors}
H01L24/83 - {using a layer connector}
H01L25/042 - {the devices being arranged next to each other
H01L25/0753 - {the devices being arranged next to each other}
H01L25/167 - {comprising optoelectronic devices, e.g. LED, photodiodes}
H01L25/50 - {Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
H01L27/1214 - {comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs}
H01L27/124 - {with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L27/1285 - {using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors}
H01L27/1292 - {using liquid deposition, e.g. printing}
H01L27/14627 - {Microlenses}
H01L27/14636 - {Interconnect structures}
H01L27/14643 - {Photodiode arrays
H01L29/78603 - {characterised by the insulating substrate or support
H01L29/78681 - {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L2924/12041 - LED
H01L2933/005 - relating to encapsulations
H01L2933/0058 - relating to optical field-shaping elements
H01L2933/0066 - relating to arrangements for conducting electric current to or from the semiconductor body
H01L2933/0091 - Scattering means in or on the semiconductor body or semiconductor body package
H01L31/02005 - {for device characterised by at least one potential jump barrier or surface barrier}
H01L31/02008 - {for solar cells or solar cell modules}
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/02325 - {the optical elements not being integrated nor being directly associated with the device}
H01L31/02327 - {the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L31/0288 - characterised by the doping material
H01L31/03046 - {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}
H01L31/043 - Mechanically stacked PV cells
H01L31/0525 - including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
H01L31/0543 - {comprising light concentrating means of the refractive type, e.g. lenses}
H01L31/0547 - {comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection}
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/167 - the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1824 - {Special manufacturing methods for microcrystalline Si, uc-Si}
H01L31/1868 - {Passivation}
H01L31/1876 - {Particular processes or apparatus for batch treatment of the devices}
H01L31/1892 - {methods involving the use of temporary, removable substrates}
H01L33/005 - {Processes}
H01L33/0095 - {Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination}
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/30 - containing only elements of group III and group V of the periodic system
H01L33/483 - {Containers}
H01L33/52 - Encapsulations
H01L33/54 - having a particular shape
H01L33/56 - Materials, e.g. epoxy or silicone resin
H01L33/58 - Optical field-shaping elements
H01L33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/021 - {Silicon based substrates}
H01S5/183 - having a vertical cavity [VCSE-lasers]
H01S5/3013 - {AIIIBV compounds}
H01S5/34326 - {with a well layer based on InGa
H01S5/423 - {having a vertical cavity}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/52 - PV systems with concentrators
Y02E10/544 - Solar cells from Group III-V materials
Y02E10/545 - Microcrystalline silicon PV cells
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

FG02-91ER45439

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Jan 10

Country of Publication:

United States

Language:

English