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Title: Article comprising a semiconducting material

Abstract

Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

Inventors:
;
Issue Date:
Research Org.:
Florida State Univ., Tallahassee, FL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576275
Patent Number(s):
10422051
Application Number:
15/677,706
Assignee:
The Florida State University Research Foundation, Inc. (Tallahassee, FL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
SC0008832
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Aug 15
Country of Publication:
United States
Language:
English

Citation Formats

Whalen, Jeffrey, and Siegrist, Theo. Article comprising a semiconducting material. United States: N. p., 2019. Web.
Whalen, Jeffrey, & Siegrist, Theo. Article comprising a semiconducting material. United States.
Whalen, Jeffrey, and Siegrist, Theo. Tue . "Article comprising a semiconducting material". United States. https://www.osti.gov/servlets/purl/1576275.
@article{osti_1576275,
title = {Article comprising a semiconducting material},
author = {Whalen, Jeffrey and Siegrist, Theo},
abstractNote = {Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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