Article comprising a semiconducting material
Abstract
Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.
- Inventors:
- Issue Date:
- Research Org.:
- Florida State Univ., Tallahassee, FL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576275
- Patent Number(s):
- 10422051
- Application Number:
- 15/677,706
- Assignee:
- The Florida State University Research Foundation, Inc. (Tallahassee, FL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
- DOE Contract Number:
- SC0008832
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Aug 15
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Whalen, Jeffrey, and Siegrist, Theo. Article comprising a semiconducting material. United States: N. p., 2019.
Web.
Whalen, Jeffrey, & Siegrist, Theo. Article comprising a semiconducting material. United States.
Whalen, Jeffrey, and Siegrist, Theo. Tue .
"Article comprising a semiconducting material". United States. https://www.osti.gov/servlets/purl/1576275.
@article{osti_1576275,
title = {Article comprising a semiconducting material},
author = {Whalen, Jeffrey and Siegrist, Theo},
abstractNote = {Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}
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