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Title: Tunable ionic electronic transistor

Abstract

Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576256
Patent Number(s):
10,429,343
Application Number:
15/428,325
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Feb 09
Country of Publication:
United States
Language:
English

Citation Formats

Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, and Agarwal, Sapan. Tunable ionic electronic transistor. United States: N. p., 2019. Web.
Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, & Agarwal, Sapan. Tunable ionic electronic transistor. United States.
Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, and Agarwal, Sapan. Tue . "Tunable ionic electronic transistor". United States. https://www.osti.gov/servlets/purl/1576256.
@article{osti_1576256,
title = {Tunable ionic electronic transistor},
author = {Talin, Albert Alec and El Gabaly Marquez, Farid and Fuller, Elliot James and Agarwal, Sapan},
abstractNote = {Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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