Title: Tunable ionic electronic transistor

Abstract

Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.

Inventors:

Talin, Albert Alec; El Gabaly Marquez, Farid; Fuller, Elliot James; Agarwal, Sapan

Issue Date:

2019-10-01

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1576256

Patent Number(s):

10429343

Application Number:

15/428,325

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L45/1206 - {Three or more terminal devices, e.g. transistor like devices}
H01L45/145 - {Oxides or nitrides}

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N27/04 - by investigating resistance {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L45/085 - {the species being metal cations, e.g. programmable metallization cells}
H01L45/147 - {Complex metal oxides, e.g. perovskites, spinels}
H01L45/148 - {Other compounds of groups 13-15, e.g. elemental or compound semiconductors}
H01L45/1266 - {adapted for supplying ionic species}

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N27/4148 - {Integrated circuits therefor, e.g. fabricated by CMOS processing

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Feb 09

Country of Publication:

United States

Language:

English