Tunable ionic electronic transistor
Abstract
Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576256
- Patent Number(s):
- 10,429,343
- Application Number:
- 15/428,325
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Feb 09
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, and Agarwal, Sapan. Tunable ionic electronic transistor. United States: N. p., 2019.
Web.
Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, & Agarwal, Sapan. Tunable ionic electronic transistor. United States.
Talin, Albert Alec, El Gabaly Marquez, Farid, Fuller, Elliot James, and Agarwal, Sapan. Tue .
"Tunable ionic electronic transistor". United States. https://www.osti.gov/servlets/purl/1576256.
@article{osti_1576256,
title = {Tunable ionic electronic transistor},
author = {Talin, Albert Alec and El Gabaly Marquez, Farid and Fuller, Elliot James and Agarwal, Sapan},
abstractNote = {Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}
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