Writing of a magnetic memory with electric pulses
Abstract
Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568754
- Patent Number(s):
- 10,388,349
- Application Number:
- 15/711,726
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- AC02-05CH11231; HR0011-13-3-0002
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/21/2017
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yang, Yang, Gorchon, Jon, Wilson, Richard Brian, Lambert, Charles Henri Alexandre, Salahuddin, Sayeef, and Bokor, Jeffrey. Writing of a magnetic memory with electric pulses. United States: N. p., 2019.
Web.
Yang, Yang, Gorchon, Jon, Wilson, Richard Brian, Lambert, Charles Henri Alexandre, Salahuddin, Sayeef, & Bokor, Jeffrey. Writing of a magnetic memory with electric pulses. United States.
Yang, Yang, Gorchon, Jon, Wilson, Richard Brian, Lambert, Charles Henri Alexandre, Salahuddin, Sayeef, and Bokor, Jeffrey. Tue .
"Writing of a magnetic memory with electric pulses". United States. https://www.osti.gov/servlets/purl/1568754.
@article{osti_1568754,
title = {Writing of a magnetic memory with electric pulses},
author = {Yang, Yang and Gorchon, Jon and Wilson, Richard Brian and Lambert, Charles Henri Alexandre and Salahuddin, Sayeef and Bokor, Jeffrey},
abstractNote = {Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}
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