Title: Silicon-based visible and near-infrared optoelectric devices

Abstract

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Inventors:

Mazur, Eric; Carey, James Edward

Issue Date:

2019-08-06

Research Org.:

Harvard College, Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1568679

Patent Number(s):

10,374,109

Application Number:

15/784,756

Assignee:

President and Fellows of Harvard College (Cambridge, MA)

DOE Contract Number:  

FC36-016011051

Resource Type:

Patent

Resource Relation:

Patent File Date: 10/16/2017

Country of Publication:

United States

Language:

English