Y - NEW / CROSS SECTIONAL TECHNOLOGIES
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S977/724 - Devices having flexible or movable element
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L2224/80862 - Heat curing
H01L2224/83862 - Heat curing
H01L2224/80121 - Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
H01L24/94 - {at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices}
H01L21/6835 - {using temporarily an auxiliary support}
H01L2924/15159 - Side view
H01L29/78681 - {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}
H01L2224/05155 - Nickel [Ni] as principal constituent
H01L29/06 - characterised by their shape
H01L2224/2919 - with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L2221/68381 - Details of chemical or physical process used for separating the auxiliary support from a device or wafer
H01L2224/03 - Manufacturing methods
H01L2924/1579 - with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L2224/83193 - wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
H01L2224/80006 - being a temporary or sacrificial substrate
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/1461 - MEMS
H01L2924/12041 - LED
H01L23/02 - Containers
H01L2924/1306 - Field-effect transistor [FET]
H01L27/1285 - {using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors}
H01L33/32 - containing nitrogen
H01L2924/12032 - Schottky diode
H01L29/78603 - {characterised by the insulating substrate or support
H01L31/1864 - {Annealing}
H01L2224/83005 - being a temporary or sacrificial substrate
H01L21/308 - using masks
H01L24/97 - {the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting}
H01L29/78696 - {characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Y - NEW / CROSS SECTIONAL TECHNOLOGIES
Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L21/02603 - {Nanowires}
H01L2224/05666 - Titanium [Ti] as principal constituent
H01L21/02628 - {using solutions}
H01L24/83 - {using a layer connector}
H01L31/03926 - {comprising a flexible substrate}
H01L2924/1305 - Bipolar Junction Transistor [BJT]
B - PERFORMING OPERATIONS
B82 - NANOTECHNOLOGY
B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L2224/05553 - being rectangular
H01L21/322 - to modify their internal properties, e.g. to produce internal imperfections
H01L24/08 - {of an individual bonding area}
H01L2924/12042 - LASER
H01L2924/15162 - Top view
H01L29/12 - characterised by the materials of which they are formed
H01L2224/03614 - by chemical means only
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L33/007 - {comprising nitride compounds}
H01L2224/0362 - Photolithography
H01L27/1292 - {using liquid deposition, e.g. printing}
H01L2224/08225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/80 - Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L24/32 - {of an individual layer connector}
H01L2221/68368 - used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
H01L2924/14 - Integrated circuits
H01L2224/0345 - Physical vapour deposition [PVD], e.g. evaporation, or sputtering
H01L2224/05644 - Gold [Au] as principal constituent
H01L2224/94 - at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
H01L25/0753 - {the devices being arranged next to each other}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L2224/05166 - Titanium [Ti] as principal constituent
H01L2924/0665 - Epoxy resin
H01L2224/83121 - Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
H01L2224/05124 - Aluminium [Al] as principal constituent
H01L2224/8385 - using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
H01L29/0673 - {oriented parallel to a substrate}
H01L2224/05082 - Two-layer arrangements
H01L2924/10329 - Gallium arsenide [GaAs]
H01L2924/12043 - Photo diode
H01L2224/0332 - Screen printing, i.e. using a stencil
H01L24/29 - {of an individual layer connector}
H01L2224/97 - the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
H01L2924/10253 - Silicon [Si]
B - PERFORMING OPERATIONS
B81 - MICROSTRUCTURAL TECHNOLOGY
B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
B81C2201/0185 - Printing, e.g. microcontact printing
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L31/1896 - {for thin-film semiconductors}
H01L2224/83 - using a layer connector
H01L2924/13063 - Metal-Semiconductor Field-Effect Transistor [MESFET]
H01L2924/01032 - Germanium [Ge]
H01L2224/05554 - being square
H01L2224/9202 - Forming additional connectors after the connecting process
H01L24/05 - {of an individual bonding area}
H01L2924/12044 - OLED
H01L2224/05073 - Single internal layer
H01L2224/05144 - Gold [Au] as principal constituent
H01L2224/05552 - in top view
Y - NEW / CROSS SECTIONAL TECHNOLOGIES
Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L2224/83192 - wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
H01L29/068 - {comprising a junction}
H01L2224/05555 - being circular or elliptic
H01L2924/00012 - Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Y - NEW / CROSS SECTIONAL TECHNOLOGIES
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S977/707 - having different types of nanoscale structures or devices on a common substrate
H - ELECTRICITY
H01 - BASIC ELECTRIC ELEMENTS
H01L - SEMICONDUCTOR DEVICES
H01L21/02521 - {Materials}
H01L24/03 - {Manufacturing methods}
H01L29/76 - Unipolar devices {, e.g. field effect transistors}
H01L2224/95 - at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
H01L2924/13055 - Insulated gate bipolar transistor [IGBT]
H01L2224/32225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/80895 - between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L2924/12036 - PN diode
H01L24/80 - {Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected}
H01L2924/15788 - Glasses, e.g. amorphous oxides, nitrides or fluorides
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
