Metal oxide semiconductor (MOS) controlled devices and methods of making the same
Abstract
Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.
- Inventors:
- Issue Date:
- Research Org.:
- Monolith Semiconductor Inc., Round Rock, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568637
- Patent Number(s):
- 10361296
- Application Number:
- 15/636,712
- Assignee:
- Monolith Semiconductor Inc. (Round Rock, TX)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000442
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/29/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, and Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States: N. p., 2019.
Web.
Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, & Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States.
Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, and Nowak, John. Tue .
"Metal oxide semiconductor (MOS) controlled devices and methods of making the same". United States. https://www.osti.gov/servlets/purl/1568637.
@article{osti_1568637,
title = {Metal oxide semiconductor (MOS) controlled devices and methods of making the same},
author = {Matocha, Kevin and Chowdhury, Sauvik and Chatty, Kiran and Nowak, John},
abstractNote = {Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}
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