Title: Power MOSFETs with superior high frequency figure-of-merit

Abstract

An insulated-gate field effect transistor includes a substrate having a drift region and a source region of first conductivity type, and a base region and shielding region of second conductivity type therein. The base region forms a first P-N junction with the source region and the shielding region extends between the drift region and the base region. A transition region of first conductivity type is provided, which is electrically coupled to the drift region. The transition region extends between a first surface of the substrate and the shielding region, and forms a second P-N junction with the base region. An insulated gate electrode is provided on a first surface of the substrate. The insulated gate electrode has an electrically conductive gate therein with a drain-side sidewall extending intermediate the second P-N junction and an end of the shielding region when viewed in transverse cross-section.

Inventors:

Baliga, Bantval Jayant

Issue Date:

2019-07-16

Research Org.:

North Carolina State Univ., Raleigh, NC (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1568614

Patent Number(s):

10355132

Application Number:

15/925,826

Assignee:

North Carolina State University (Raleigh, NC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/66666 - {Vertical transistors
H01L29/0878 - {Impurity concentration or distribution}
H01L29/41775 - {characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode}
H01L29/6656 - {using multiple spacer layers, e.g. multiple sidewall spacers}
H01L29/42376 - {characterised by the length or the sectional shape}
H01L29/7823 - {with an edge termination structure
H01L29/7811 - {with an edge termination structure
H01L29/1608 - {Silicon carbide}
H01L29/7827 - {Vertical transistors
H01L29/7836 - {with a significant overlap between the lightly doped extension and the gate electrode
H01L29/6659 - {with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET}
H01L29/66068 - {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs
H01L29/7802 - {Vertical DMOS transistors, i.e. VDMOS transistors}

Show less

DOE Contract Number:  

EE0006521

Resource Type:

Patent

Resource Relation:

Patent File Date: 03/20/2018

Country of Publication:

United States

Language:

English