Power MOSFETs with superior high frequency figure-of-merit
Abstract
An insulated-gate field effect transistor includes a substrate having a drift region and a source region of first conductivity type, and a base region and shielding region of second conductivity type therein. The base region forms a first P-N junction with the source region and the shielding region extends between the drift region and the base region. A transition region of first conductivity type is provided, which is electrically coupled to the drift region. The transition region extends between a first surface of the substrate and the shielding region, and forms a second P-N junction with the base region. An insulated gate electrode is provided on a first surface of the substrate. The insulated gate electrode has an electrically conductive gate therein with a drain-side sidewall extending intermediate the second P-N junction and an end of the shielding region when viewed in transverse cross-section.
- Inventors:
- Issue Date:
- Research Org.:
- North Carolina State Univ., Raleigh, NC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568614
- Patent Number(s):
- 10,355,132
- Application Number:
- 15/925,826
- Assignee:
- North Carolina State University (Raleigh, NC)
- DOE Contract Number:
- EE0006521
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 03/20/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Baliga, Bantval Jayant. Power MOSFETs with superior high frequency figure-of-merit. United States: N. p., 2019.
Web.
Baliga, Bantval Jayant. Power MOSFETs with superior high frequency figure-of-merit. United States.
Baliga, Bantval Jayant. Tue .
"Power MOSFETs with superior high frequency figure-of-merit". United States. https://www.osti.gov/servlets/purl/1568614.
@article{osti_1568614,
title = {Power MOSFETs with superior high frequency figure-of-merit},
author = {Baliga, Bantval Jayant},
abstractNote = {An insulated-gate field effect transistor includes a substrate having a drift region and a source region of first conductivity type, and a base region and shielding region of second conductivity type therein. The base region forms a first P-N junction with the source region and the shielding region extends between the drift region and the base region. A transition region of first conductivity type is provided, which is electrically coupled to the drift region. The transition region extends between a first surface of the substrate and the shielding region, and forms a second P-N junction with the base region. An insulated gate electrode is provided on a first surface of the substrate. The insulated gate electrode has an electrically conductive gate therein with a drain-side sidewall extending intermediate the second P-N junction and an end of the shielding region when viewed in transverse cross-section.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}
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