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Title: Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber

Abstract

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568464
Patent Number(s):
10,319,871
Application Number:
16/028,249
Assignee:
International Business Machines Corporation (Armonk, NY)
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/05/2018
Country of Publication:
United States
Language:
English

Citation Formats

Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber. United States: N. p., 2019. Web.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber. United States.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue . "Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber". United States. https://www.osti.gov/servlets/purl/1568464.
@article{osti_1568464,
title = {Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber},
author = {Gershon, Talia S. and Guha, Supratik and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}

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Works referenced in this record:

Heat treatment process and photovoltaic device based on said process
patent, February 2014


Forming chalcogenide semiconductor absorbers
patent, October 2013


Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
patent, March 2017


Semiconductor nanoparticles and method for producing same
patent, May 2015