Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials
Abstract
Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568410
- Patent Number(s):
- 10304989
- Application Number:
- 15/923,307
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 03/16/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, and Duenow, Joel Nathan. Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials. United States: N. p., 2019.
Web.
Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, & Duenow, Joel Nathan. Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials. United States.
Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, and Duenow, Joel Nathan. Tue .
"Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials". United States. https://www.osti.gov/servlets/purl/1568410.
@article{osti_1568410,
title = {Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials},
author = {Albin, David Scott and Metzger, Wyatt Keith and Burst, James Michael and Colegrove, Eric Michael and Duenow, Joel Nathan},
abstractNote = {Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}
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Works referenced in this record:
Combinatorial methods for developing superstrate thin film solar cells
patent, September 2014
- Avachat, Upendra
- US Patent Document 8,835,212
Methods of growing CdTe-based materials at high rates
patent, November 2018
- Burst, James; Albin, David S.; Colegrove, Eric
- US Patent Document 10,134,590