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Title: Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials

Abstract

Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568410
Patent Number(s):
10304989
Application Number:
15/923,307
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/16/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, and Duenow, Joel Nathan. Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials. United States: N. p., 2019. Web.
Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, & Duenow, Joel Nathan. Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials. United States.
Albin, David Scott, Metzger, Wyatt Keith, Burst, James Michael, Colegrove, Eric Michael, and Duenow, Joel Nathan. Tue . "Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials". United States. https://www.osti.gov/servlets/purl/1568410.
@article{osti_1568410,
title = {Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials},
author = {Albin, David Scott and Metzger, Wyatt Keith and Burst, James Michael and Colegrove, Eric Michael and Duenow, Joel Nathan},
abstractNote = {Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}

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