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Title: Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof

Abstract

This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.

Inventors:
; ;
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568364
Patent Number(s):
10,294,524
Application Number:
15/088,549
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231; FA9950-10-1-0451; HDTRA1-15-1-0036; N00014-09-1-1066
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/01/2016
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zettl, Alexander K., Dunn, Gabriel P., and Gilbert, Stephen M. Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof. United States: N. p., 2019. Web.
Zettl, Alexander K., Dunn, Gabriel P., & Gilbert, Stephen M. Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof. United States.
Zettl, Alexander K., Dunn, Gabriel P., and Gilbert, Stephen M. Tue . "Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof". United States. https://www.osti.gov/servlets/purl/1568364.
@article{osti_1568364,
title = {Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof},
author = {Zettl, Alexander K. and Dunn, Gabriel P. and Gilbert, Stephen M.},
abstractNote = {This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}

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Works referenced in this record:

Method of manufacture of atomically thin boron nitride
patent, August 2013


Controlled fabrication of nanopores in nanometric solid state materials
patent, April 2017