Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof
Abstract
This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568364
- Patent Number(s):
- 10,294,524
- Application Number:
- 15/088,549
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- AC02-05CH11231; FA9950-10-1-0451; HDTRA1-15-1-0036; N00014-09-1-1066
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/01/2016
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zettl, Alexander K., Dunn, Gabriel P., and Gilbert, Stephen M. Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof. United States: N. p., 2019.
Web.
Zettl, Alexander K., Dunn, Gabriel P., & Gilbert, Stephen M. Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof. United States.
Zettl, Alexander K., Dunn, Gabriel P., and Gilbert, Stephen M. Tue .
"Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof". United States. https://www.osti.gov/servlets/purl/1568364.
@article{osti_1568364,
title = {Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof},
author = {Zettl, Alexander K. and Dunn, Gabriel P. and Gilbert, Stephen M.},
abstractNote = {This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}
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Works referenced in this record:
Method of manufacture of atomically thin boron nitride
patent, August 2013
- Zettl, Alexander K.
- US Patent Document 8,501,024
Controlled fabrication of nanopores in nanometric solid state materials
patent, April 2017
- Russo, Christopher J.; Golovchenko, Jene A.; Branton, Daniel
- US Patent Document 9,611,140