Mid-infrared photodetectors

Title: Mid-infrared photodetectors

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Abstract

Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Inventors:: Guyot-Sionnest, Philippe; Keuleyan, Sean E.; Lhuillier, Emmanuel

Issue Date:: 2019-05-14

Research Org.:: Univ. of Chicago, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568342

Patent Number(s):: 10290753

Application Number:: 15/062,418

Assignee:: The University of Chicago (Chicago, IL)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
G01J1/4228 - {arrangements with two or more detectors, e.g. for sensitivity compensation}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0324 - {comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te}
H01L27/146 - Imager structures
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L31/09 - Devices sensitive to infra-red, visible or ultraviolet radiation
H01L31/0272 - Selenium or tellurium

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C09K11/89 - containing mercury

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/035218 - {the quantum structure being quantum dots}

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DOE Contract Number:: DMR-070626; FG02-06ER46326

Resource Type:: Patent

Resource Relation:: Patent File Date: 03/07/2016

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Guyot-Sionnest, Philippe, Keuleyan, Sean E., and Lhuillier, Emmanuel. Mid-infrared photodetectors.  United States: N. p., 2019. 
        Web.

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                    Guyot-Sionnest, Philippe, Keuleyan, Sean E., & Lhuillier, Emmanuel. Mid-infrared photodetectors.  United States.

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                    Guyot-Sionnest, Philippe, Keuleyan, Sean E., and Lhuillier, Emmanuel. Tue .  
        "Mid-infrared photodetectors".  United States.  https://www.osti.gov/servlets/purl/1568342.

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@article{osti_1568342,

  title        = {Mid-infrared photodetectors},

  author       = {Guyot-Sionnest, Philippe and Keuleyan, Sean E. and Lhuillier, Emmanuel},

  abstractNote = {Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {5}

}

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