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Title: Interband cascade devices

Abstract

Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1568312
Patent Number(s):
10283658
Application Number:
14/853,588
Assignee:
The Board of Regents of the University of Oklahoma (Norman, OK)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/14/2015
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING

Citation Formats

Yang, Rui Q. Interband cascade devices. United States: N. p., 2019. Web.
Yang, Rui Q. Interband cascade devices. United States.
Yang, Rui Q. Tue . "Interband cascade devices". United States. https://www.osti.gov/servlets/purl/1568312.
@article{osti_1568312,
title = {Interband cascade devices},
author = {Yang, Rui Q.},
abstractNote = {Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 07 00:00:00 EDT 2019},
month = {Tue May 07 00:00:00 EDT 2019}
}

Works referenced in this record:

Interband cascade detectors
patent, October 2007


Solar Cell with Epitaxially Grown Quantum Dot Material
patent-application, July 2005


Silicon solar cell with germanium backside solar cell
patent, June 2004


Method of Operating a Solar Cell
patent-application, November 2005


Interband cascade (IC) photovoltaic (PV) architecture for PV devices
patent, October 2015