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Title: Optical quantification of interfacial charge states

Abstract

Methods of generating second harmonic generation (SHG) signals from interfaces formed with, or formed over, a noncentrosymmetric material, e.g., α-quartz, are provided. The methods make use of the noncentrosymmetric material as an internal phase reference for the determination of a variety of interfacial electrostatic parameters, including interfacial potential, interfacial charge density, and the sign of the interfacial charge (i.e., net positive or net negative).

Inventors:
; ; ;
Issue Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568274
Patent Number(s):
10,274,807
Application Number:
15/834,250
Assignee:
Northwestern University (Evanston, IL); Battelle Memorial Institute (Columbus, OH); The Trustees of Columbia University in the City of New York (New York, NY)
DOE Contract Number:  
AC05-76RL01830; CHE1057483; CHE1464916
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/07/2017
Country of Publication:
United States
Language:
English

Citation Formats

Geiger, Franz M., Ohno, Paul E., Wang, Hong-fei, and Eisenthal, Kenneth B. Optical quantification of interfacial charge states. United States: N. p., 2019. Web.
Geiger, Franz M., Ohno, Paul E., Wang, Hong-fei, & Eisenthal, Kenneth B. Optical quantification of interfacial charge states. United States.
Geiger, Franz M., Ohno, Paul E., Wang, Hong-fei, and Eisenthal, Kenneth B. Tue . "Optical quantification of interfacial charge states". United States. https://www.osti.gov/servlets/purl/1568274.
@article{osti_1568274,
title = {Optical quantification of interfacial charge states},
author = {Geiger, Franz M. and Ohno, Paul E. and Wang, Hong-fei and Eisenthal, Kenneth B.},
abstractNote = {Methods of generating second harmonic generation (SHG) signals from interfaces formed with, or formed over, a noncentrosymmetric material, e.g., α-quartz, are provided. The methods make use of the noncentrosymmetric material as an internal phase reference for the determination of a variety of interfacial electrostatic parameters, including interfacial potential, interfacial charge density, and the sign of the interfacial charge (i.e., net positive or net negative).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}

Patent:

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