Selective area growth of semiconductors using patterned sol-gel materials

Warren, Emily L.; Tamboli, Adele Clare

Title: Selective area growth of semiconductors using patterned sol-gel materials

Abstract

Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.

Inventors:: Warren, Emily L.; Tamboli, Adele Clare

Issue Date:: 2019-04-09

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568186

Patent Number(s):: 10256093

Application Number:: 15/362,420

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02546 - {Arsenides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02642 - {Mask materials other than SiO2 or SiN}
H01L21/02647 - {Lateral overgrowth}

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 11/28/2016

Country of Publication:: United States

Language:: English

Citation Formats


                    Warren, Emily L., and Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials.  United States: N. p., 2019. 
        Web.

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                    Warren, Emily L., & Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials.  United States.

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                    Warren, Emily L., and Tamboli, Adele Clare. Tue .  
        "Selective area growth of semiconductors using patterned sol-gel materials".  United States.  https://www.osti.gov/servlets/purl/1568186.

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@article{osti_1568186,

  title        = {Selective area growth of semiconductors using patterned sol-gel materials},

  author       = {Warren, Emily L. and Tamboli, Adele Clare},

  abstractNote = {Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {4}

}

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Works referenced in this record:

Methods for removing nuclei formed during epitaxial growth
patent, June 2016

Lee, Jae Hyung; Kim, Youngsik; Na, Yeul
US Patent Document 9,378,950
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9378950

Semiconductive Micro- and Nano-Wire Array Manufacturing
patent-application, February 2014

Warren, Emily L.; Audesirk, Heather A.; Lewis, Nathan S.
US Patent Application 13/972809; 20140057416 A1
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140057416

Hetero-epitaxial growth of non-lattice matched semiconductors
patent, October 1994

Terranova, Nancy; Barnett, Allen M.
US Patent Document 5,356,509
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5356509

Semiconductive micro- and nano-wire array manufacturing
patent, June 2015

Warren, Emily L.; Audesirk, Heather A.; Lewis, Nathan S.
US Patent Document 9,048,097
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9048097

Selective OMCVD growth of compound semiconductor materials on silicon substrates
patent, May 1989

Salerno, Jack P.; Lee, Jhang W.; McCullough, Richard
US Patent Document 4,826,784
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4826784

Isoplanar isolated active regions
patent, August 1996

Miller, Robert O.
US Patent Document 5,548,154
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5548154

Solution growth of lattice mismatched and solubility mismatched heterostructures
patent, October 1989

Barnett, Allen M.; Zolper, John C.
US Patent Document 4,876,210
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4876210

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Similar Records

Title: Selective area growth of semiconductors using patterned sol-gel materials

Abstract

Citation Formats

Methods for removing nuclei formed during epitaxial growth patent, June 2016

Semiconductive Micro- and Nano-Wire Array Manufacturing patent-application, February 2014

Hetero-epitaxial growth of non-lattice matched semiconductors patent, October 1994

Semiconductive micro- and nano-wire array manufacturing patent, June 2015

Selective OMCVD growth of compound semiconductor materials on silicon substrates patent, May 1989

Isoplanar isolated active regions patent, August 1996

Solution growth of lattice mismatched and solubility mismatched heterostructures patent, October 1989

Methods for removing nuclei formed during epitaxial growth
patent, June 2016

Semiconductive Micro- and Nano-Wire Array Manufacturing
patent-application, February 2014

Hetero-epitaxial growth of non-lattice matched semiconductors
patent, October 1994

Semiconductive micro- and nano-wire array manufacturing
patent, June 2015

Selective OMCVD growth of compound semiconductor materials on silicon substrates
patent, May 1989

Isoplanar isolated active regions
patent, August 1996

Solution growth of lattice mismatched and solubility mismatched heterostructures
patent, October 1989