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Title: Selective area growth of semiconductors using patterned sol-gel materials

Abstract

Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568186
Patent Number(s):
10,256,093
Application Number:
15/362,420
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/28/2016
Country of Publication:
United States
Language:
English

Citation Formats

Warren, Emily L., and Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials. United States: N. p., 2019. Web.
Warren, Emily L., & Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials. United States.
Warren, Emily L., and Tamboli, Adele Clare. Tue . "Selective area growth of semiconductors using patterned sol-gel materials". United States. https://www.osti.gov/servlets/purl/1568186.
@article{osti_1568186,
title = {Selective area growth of semiconductors using patterned sol-gel materials},
author = {Warren, Emily L. and Tamboli, Adele Clare},
abstractNote = {Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}

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Works referenced in this record:

Methods for removing nuclei formed during epitaxial growth
patent, June 2016


Hetero-epitaxial growth of non-lattice matched semiconductors
patent, October 1994


Semiconductive micro- and nano-wire array manufacturing
patent, June 2015


Selective OMCVD growth of compound semiconductor materials on silicon substrates
patent, May 1989


Isoplanar isolated active regions
patent, August 1996