Selective area growth of semiconductors using patterned sol-gel materials
Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568186
- Patent Number(s):
- 10256093
- Application Number:
- 15/362,420
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/28/2016
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Warren, Emily L., and Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials. United States: N. p., 2019.
Web.
Warren, Emily L., & Tamboli, Adele Clare. Selective area growth of semiconductors using patterned sol-gel materials. United States.
Warren, Emily L., and Tamboli, Adele Clare. Tue .
"Selective area growth of semiconductors using patterned sol-gel materials". United States. https://www.osti.gov/servlets/purl/1568186.
@article{osti_1568186,
title = {Selective area growth of semiconductors using patterned sol-gel materials},
author = {Warren, Emily L. and Tamboli, Adele Clare},
abstractNote = {Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}
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