High quality AlSb for radiation detection
Abstract
Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).
- Inventors:
- Issue Date:
- Research Org.:
- STC.UNM, Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568158
- Patent Number(s):
- 10249780
- Application Number:
- 15/424,464
- Assignee:
- STC.UNM (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- 00044825
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/03/2017
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States: N. p., 2019.
Web.
Balakrishnan, Ganesh, Hecht, Adam Alexander, & Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States.
Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. Tue .
"High quality AlSb for radiation detection". United States. https://www.osti.gov/servlets/purl/1568158.
@article{osti_1568158,
title = {High quality AlSb for radiation detection},
author = {Balakrishnan, Ganesh and Hecht, Adam Alexander and Vaughan, Erin Ivey},
abstractNote = {Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}
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