High quality AlSb for radiation detection
Abstract
Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).
- Inventors:
- Issue Date:
- Research Org.:
- STC.UNM, Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568158
- Patent Number(s):
- 10249780
- Application Number:
- 15/424,464
- Assignee:
- STC.UNM (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- 00044825
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/03/2017
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States: N. p., 2019.
Web.
Balakrishnan, Ganesh, Hecht, Adam Alexander, & Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States.
Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. Tue .
"High quality AlSb for radiation detection". United States. https://www.osti.gov/servlets/purl/1568158.
@article{osti_1568158,
title = {High quality AlSb for radiation detection},
author = {Balakrishnan, Ganesh and Hecht, Adam Alexander and Vaughan, Erin Ivey},
abstractNote = {Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Epitaxial growth of in-plane nanowires and nanowire devices
patent, October 2011
- Lee, Seung-Chang; Brueck, Steven
- US Patent Document 8,030,108
Barrier infrared detectors on lattice mismatch substrates
patent, December 2015
- Khoshakhlagh, Arezou; Ting, David Z.; Gunapala, Sarath D.
- US Patent Document 9,214,581
Epitaxial growth of in-plane nanowires and nanowire devices
patent, October 2013
- Lee, Seung-Chang; Brueck, Steven
- US Patent Document 8,557,622
Misfit Dislocation Forming Interfacial Self-Assembly for Growth of Highly-Mismatched III-SB Alloys
patent-application, March 2010
- Huffaker, Diana L.; Dawson, Larry R.; Balakrishnan, Ganesh
- US Patent Document 12/332014; 20100051900
Tunable infrared lasers for gas-phase spectroscopy
patent, February 2010
- Brueck, Steven; Xue, Liang; Kaspi, Ron
- US Patent Document 7,656,912
Semiconductor epitaxy on diamond for heat spreading applications
patent, December 2013
- Balakrishnan, Ganesh C.; Moloney, Jerome V.; Hasson, Victor H.
- US Patent Document 8,609,461
Methods Of Solid Phase Recrystallization Of Thin Film Using Pulse Train Annealing Method
patent-application, March 2011
- Moffatt, Stephen; Hunter, Aaron Muir; Adams, Bruce E.
- US Patent Application 12/764723; 20110065264