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Title: High quality AlSb for radiation detection

Abstract

Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).

Inventors:
; ;
Issue Date:
Research Org.:
STC.UNM, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568158
Patent Number(s):
10249780
Application Number:
15/424,464
Assignee:
STC.UNM (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
00044825
Resource Type:
Patent
Resource Relation:
Patent File Date: 02/03/2017
Country of Publication:
United States
Language:
English

Citation Formats

Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States: N. p., 2019. Web.
Balakrishnan, Ganesh, Hecht, Adam Alexander, & Vaughan, Erin Ivey. High quality AlSb for radiation detection. United States.
Balakrishnan, Ganesh, Hecht, Adam Alexander, and Vaughan, Erin Ivey. Tue . "High quality AlSb for radiation detection". United States. https://www.osti.gov/servlets/purl/1568158.
@article{osti_1568158,
title = {High quality AlSb for radiation detection},
author = {Balakrishnan, Ganesh and Hecht, Adam Alexander and Vaughan, Erin Ivey},
abstractNote = {Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}

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Works referenced in this record:

Epitaxial growth of in-plane nanowires and nanowire devices
patent, October 2011


Barrier infrared detectors on lattice mismatch substrates
patent, December 2015


Epitaxial growth of in-plane nanowires and nanowire devices
patent, October 2013


Tunable infrared lasers for gas-phase spectroscopy
patent, February 2010


Semiconductor epitaxy on diamond for heat spreading applications
patent, December 2013