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Title: Safe and low temperature thermite reaction systems and method to form porous silicon

Abstract

Embodiments of a safe, low-temperature reaction system and method for preparing porous silicon are disclosed. The porous silicon is prepared from porous silica, a low-melting metal halide, and a metal comprising aluminum, magnesium, or a combination thereof. Advantageously, embodiments of the disclosed methods can be performed at temperatures ≤400° C. Silicon produced by the disclosed methods has a porosity that is equal to or greater than the porous silica precursor. The porous silicon is suitable for use in electrodes.

Inventors:
; ;
Issue Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568140
Patent Number(s):
10246337
Application Number:
15/436,027
Assignee:
Battelle Memorial Institute (Richland, WA)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Patent
Resource Relation:
Patent File Date: 02/17/2017
Country of Publication:
United States
Language:
English

Citation Formats

Li, Xiaolin, Zhang, Ji -Guang, and Liu, Jun. Safe and low temperature thermite reaction systems and method to form porous silicon. United States: N. p., 2019. Web.
Li, Xiaolin, Zhang, Ji -Guang, & Liu, Jun. Safe and low temperature thermite reaction systems and method to form porous silicon. United States.
Li, Xiaolin, Zhang, Ji -Guang, and Liu, Jun. Tue . "Safe and low temperature thermite reaction systems and method to form porous silicon". United States. https://www.osti.gov/servlets/purl/1568140.
@article{osti_1568140,
title = {Safe and low temperature thermite reaction systems and method to form porous silicon},
author = {Li, Xiaolin and Zhang, Ji -Guang and Liu, Jun},
abstractNote = {Embodiments of a safe, low-temperature reaction system and method for preparing porous silicon are disclosed. The porous silicon is prepared from porous silica, a low-melting metal halide, and a metal comprising aluminum, magnesium, or a combination thereof. Advantageously, embodiments of the disclosed methods can be performed at temperatures ≤400° C. Silicon produced by the disclosed methods has a porosity that is equal to or greater than the porous silica precursor. The porous silicon is suitable for use in electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}

Patent:

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