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Title: Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials

Abstract

Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 μm.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568126
Patent Number(s):
10243127
Application Number:
15/689,344
Assignee:
University of Houston (Houston, TX)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
DOE Contract Number:  
SC0001299; SC0010831
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/29/2017
Country of Publication:
United States
Language:
English

Citation Formats

Ren, Zhifeng, and He, Ran. Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials. United States: N. p., 2019. Web.
Ren, Zhifeng, & He, Ran. Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials. United States.
Ren, Zhifeng, and He, Ran. Tue . "Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials". United States. https://www.osti.gov/servlets/purl/1568126.
@article{osti_1568126,
title = {Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials},
author = {Ren, Zhifeng and He, Ran},
abstractNote = {Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 μm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

Works referenced in this record:

Half-Heusler Alloys with Enhanced Figure of Merit and Methods of Making
patent-application, December 2012