Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials

Title: Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials

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Abstract

Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 μm.

Inventors:: Ren, Zhifeng; He, Ran

Issue Date:: 2019-03-26

Research Org.:: Univ. of Houston, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568126

Patent Number(s):: 10243127

Application Number:: 15/689,344

Assignee:: University of Houston (Houston, TX)

Patent Classifications (CPCs):: C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS

B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER

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C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C22C38/00 - Ferrous alloys, e.g. steel alloys
C22C1/04 - by powder metallurgy

B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
B22F2009/043 - {by ball milling}

C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C22C33/0278 - {with at least one alloying element having a minimum content above 5%}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/34 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C22C12/00 - Alloys based on antimony or bismuth
C22C1/045 - {Alloys based on refractory metals}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/20 - comprising metals only

B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
B22F2998/10 - Processes characterised by the sequence of their steps

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L35/18 - comprising arsenic or antimony or bismuth

B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
B22F3/14 - simultaneously

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DOE Contract Number:: SC0001299; SC0010831

Resource Type:: Patent

Resource Relation:: Patent File Date: 08/29/2017

Country of Publication:: United States

Language:: English

Citation Formats


                    Ren, Zhifeng, and He, Ran. Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials.  United States: N. p., 2019. 
        Web.

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                    Ren, Zhifeng, & He, Ran. Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials.  United States.

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                    Ren, Zhifeng, and He, Ran. Tue .  
        "Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials".  United States.  https://www.osti.gov/servlets/purl/1568126.

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@article{osti_1568126,

  title        = {Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials},

  author       = {Ren, Zhifeng and He, Ran},

  abstractNote = {Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 μm.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {3}

}

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