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Title: Continuous single crystal growth of graphene

Abstract

Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.

Inventors:
; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568076
Patent Number(s):
10233566
Application Number:
15/393,464
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/29/2016
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Continuous single crystal growth of graphene. United States: N. p., 2019. Web.
List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., & Smirnov, Sergei N. Continuous single crystal growth of graphene. United States.
List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Tue . "Continuous single crystal growth of graphene". United States. https://www.osti.gov/servlets/purl/1568076.
@article{osti_1568076,
title = {Continuous single crystal growth of graphene},
author = {List, III, Frederick Alyious and Stehle, Yijing Y. and Vlassiouk, Ivan V. and Smirnov, Sergei N.},
abstractNote = {Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

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