Continuous single crystal growth of graphene

Title: Continuous single crystal growth of graphene

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Abstract

Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.

Inventors:: List, III, Frederick Alyious; Stehle, Yijing Y.; Vlassiouk, Ivan V.; Smirnov, Sergei N.

Issue Date:: 2019-03-19

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568076

Patent Number(s):: 10233566

Application Number:: 15/393,464

Assignee:: UT-Battelle, LLC (Oak Ridge, TN)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/14 - Feed and outlet means for the gases
C30B25/025 - {Continuous growth}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/26 - Deposition of carbon only

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/02 - Elements

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/45563 - {Gas nozzles}
C23C16/545 - {for coating elongated substrates}

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DOE Contract Number:: AC05-00OR22725

Resource Type:: Patent

Resource Relation:: Patent File Date: 12/29/2016

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Continuous single crystal growth of graphene.  United States: N. p., 2019. 
        Web.

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                    List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., & Smirnov, Sergei N. Continuous single crystal growth of graphene.  United States.

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                    List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Tue .  
        "Continuous single crystal growth of graphene".  United States.  https://www.osti.gov/servlets/purl/1568076.

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@article{osti_1568076,

  title        = {Continuous single crystal growth of graphene},

  author       = {List, III, Frederick Alyious and Stehle, Yijing Y. and Vlassiouk, Ivan V. and Smirnov, Sergei N.},

  abstractNote = {Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {3}

}

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