Continuous single crystal growth of graphene
Abstract
Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568076
- Patent Number(s):
- 10233566
- Application Number:
- 15/393,464
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/29/2016
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Continuous single crystal growth of graphene. United States: N. p., 2019.
Web.
List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., & Smirnov, Sergei N. Continuous single crystal growth of graphene. United States.
List, III, Frederick Alyious, Stehle, Yijing Y., Vlassiouk, Ivan V., and Smirnov, Sergei N. Tue .
"Continuous single crystal growth of graphene". United States. https://www.osti.gov/servlets/purl/1568076.
@article{osti_1568076,
title = {Continuous single crystal growth of graphene},
author = {List, III, Frederick Alyious and Stehle, Yijing Y. and Vlassiouk, Ivan V. and Smirnov, Sergei N.},
abstractNote = {Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}
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