System and method for performing SRAM write assist

Title: System and method for performing SRAM write assist

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Abstract

A method and a system are provided for performing write assist. Write assist circuitry is initialized and voltage collapse is initiated to reduce a column supply voltage provided to a storage cell. A bitline of the storage cell is boosted to a boosted voltage level that is below a low supply voltage provided to the storage cell and data encoded by the bitline is written to the storage cell.

Inventors:: Zimmer, Brian Matthew; Sinangil, Mahmut Ersin

Issue Date:: 2014-10-14

Research Org.:: NVIDIA Corp., Santa Clara, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1532132

Patent Number(s):: 8,861,290

Application Number:: 13/710,314

Assignee:: NVIDIA Corporation (Santa Clara, CA)

DOE Contract Number:: B599861

Resource Type:: Patent

Resource Relation:: Patent File Date: 2012-12-10

Country of Publication:: United States

Language:: English

Citation Formats


                    Zimmer, Brian Matthew, and Sinangil, Mahmut Ersin. System and method for performing SRAM write assist.  United States: N. p., 2014. 
        Web.

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                    Zimmer, Brian Matthew, & Sinangil, Mahmut Ersin. System and method for performing SRAM write assist.  United States.

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                    Zimmer, Brian Matthew, and Sinangil, Mahmut Ersin. Tue .  
        "System and method for performing SRAM write assist".  United States.  https://www.osti.gov/servlets/purl/1532132.

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@article{osti_1532132,

  title        = {System and method for performing SRAM write assist},

  author       = {Zimmer, Brian Matthew and Sinangil, Mahmut Ersin},

  abstractNote = {A method and a system are provided for performing write assist. Write assist circuitry is initialized and voltage collapse is initiated to reduce a column supply voltage provided to a storage cell. A bitline of the storage cell is boosted to a boosted voltage level that is below a low supply voltage provided to the storage cell and data encoded by the bitline is written to the storage cell.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {10}

}

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