skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial growth of in-plane nanowires and nanowire devices

Abstract

Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Inventors:
;
Issue Date:
Research Org.:
STC.UNM, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532108
Patent Number(s):
8785226
Application Number:
14/032,904
Assignee:
STC.UNM (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
50615
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013-09-20
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Seung Chang, and Brueck, Steven R. J. Epitaxial growth of in-plane nanowires and nanowire devices. United States: N. p., 2014. Web.
Lee, Seung Chang, & Brueck, Steven R. J. Epitaxial growth of in-plane nanowires and nanowire devices. United States.
Lee, Seung Chang, and Brueck, Steven R. J. Tue . "Epitaxial growth of in-plane nanowires and nanowire devices". United States. https://www.osti.gov/servlets/purl/1532108.
@article{osti_1532108,
title = {Epitaxial growth of in-plane nanowires and nanowire devices},
author = {Lee, Seung Chang and Brueck, Steven R. J.},
abstractNote = {Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}

Patent:

Save / Share:

Works referenced in this record:

Nitride semiconductor element and production method for nitride semiconductor element
patent, November 2004


Epitaxial growth of in-plane nanowires and nanowire devices
patent, October 2011


Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
patent, November 2004


    Works referencing / citing this record:

    Dual-semiconductor complementary metal-oxide-semiconductor device
    patent, April 2017


    Dual-semiconductor complementary metal-oxide-semiconductor device
    patent, September 2016