Yttrium contacts for germanium semiconductor radiation detectors
Abstract
A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
- Inventors:
- Issue Date:
- Research Org.:
- PHDS Co., Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1532095
- Patent Number(s):
- 8729656
- Application Number:
- 13/068,811
- Assignee:
- DOESC
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- SC0002477
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011-05-20
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Hull, Ethan, Pehl, Richard H., Suttle, Bruce, and Lathrop, James. Yttrium contacts for germanium semiconductor radiation detectors. United States: N. p., 2014.
Web.
Hull, Ethan, Pehl, Richard H., Suttle, Bruce, & Lathrop, James. Yttrium contacts for germanium semiconductor radiation detectors. United States.
Hull, Ethan, Pehl, Richard H., Suttle, Bruce, and Lathrop, James. Tue .
"Yttrium contacts for germanium semiconductor radiation detectors". United States. https://www.osti.gov/servlets/purl/1532095.
@article{osti_1532095,
title = {Yttrium contacts for germanium semiconductor radiation detectors},
author = {Hull, Ethan and Pehl, Richard H. and Suttle, Bruce and Lathrop, James},
abstractNote = {A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 20 00:00:00 EDT 2014},
month = {Tue May 20 00:00:00 EDT 2014}
}
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