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Title: Yttrium contacts for germanium semiconductor radiation detectors

Abstract

A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.

Inventors:
; ; ;
Issue Date:
Research Org.:
PHDS Co., Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532095
Patent Number(s):
8,729,656
Application Number:
13/068,811
Assignee:
DOESC
DOE Contract Number:  
SC0002477
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011-05-20
Country of Publication:
United States
Language:
English

Citation Formats

Hull, Ethan, Pehl, Richard H., Suttle, Bruce, and Lathrop, James. Yttrium contacts for germanium semiconductor radiation detectors. United States: N. p., 2014. Web.
Hull, Ethan, Pehl, Richard H., Suttle, Bruce, & Lathrop, James. Yttrium contacts for germanium semiconductor radiation detectors. United States.
Hull, Ethan, Pehl, Richard H., Suttle, Bruce, and Lathrop, James. Tue . "Yttrium contacts for germanium semiconductor radiation detectors". United States. https://www.osti.gov/servlets/purl/1532095.
@article{osti_1532095,
title = {Yttrium contacts for germanium semiconductor radiation detectors},
author = {Hull, Ethan and Pehl, Richard H. and Suttle, Bruce and Lathrop, James},
abstractNote = {A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

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Works referenced in this record:

Hyperpure germanium coaxial radiation detector
patent, December 1980


Germanium detector passivated with hydrogenated amorphous germanium
patent, May 1986


Electrode assembly for a semiconductor device
patent, April 1994