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Title: Superlattice photodetector having improved carrier mobility

Abstract

In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532075
Patent Number(s):
9929293
Application Number:
15/479,134
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017-04-04
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States: N. p., 2018. Web.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., & Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Tue . "Superlattice photodetector having improved carrier mobility". United States. https://www.osti.gov/servlets/purl/1532075.
@article{osti_1532075,
title = {Superlattice photodetector having improved carrier mobility},
author = {Kim, Jin K. and Klem, John F. and Shaner, Eric A. and Olson, Benjamin Varberg and Kadlec, Emil Andrew and Tauke-Pedretti, Anna M. and Fortune, Torben Ray},
abstractNote = {In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

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Works referenced in this record:

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetectors
journal, November 2015


Progress in Infrared Photodetectors Since 2000
journal, April 2013


Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013


Elimination of heterojunction band discontinuities
patent, December 1992


Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
journal, December 2015


Structural and optical characterization of type-II InAs/InAs 1−x Sb x superlattices grown by metalorganic chemical vapor deposition
journal, August 2011


Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 x S b x Type-II Superlattices
journal, April 2015


Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
journal, December 2011