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Title: Superlattice photodetector having improved carrier mobility

Abstract

In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532075
Patent Number(s):
9,929,293
Application Number:
15/479,134
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017-04-04
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States: N. p., 2018. Web.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., & Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Tue . "Superlattice photodetector having improved carrier mobility". United States. https://www.osti.gov/servlets/purl/1532075.
@article{osti_1532075,
title = {Superlattice photodetector having improved carrier mobility},
author = {Kim, Jin K. and Klem, John F. and Shaner, Eric A. and Olson, Benjamin Varberg and Kadlec, Emil Andrew and Tauke-Pedretti, Anna M. and Fortune, Torben Ray},
abstractNote = {In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

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