Superlattice photodetector having improved carrier mobility
Abstract
In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1532075
- Patent Number(s):
- 9929293
- Application Number:
- 15/479,134
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017-04-04
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States: N. p., 2018.
Web.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., & Fortune, Torben Ray. Superlattice photodetector having improved carrier mobility. United States.
Kim, Jin K., Klem, John F., Shaner, Eric A., Olson, Benjamin Varberg, Kadlec, Emil Andrew, Tauke-Pedretti, Anna M., and Fortune, Torben Ray. Tue .
"Superlattice photodetector having improved carrier mobility". United States. https://www.osti.gov/servlets/purl/1532075.
@article{osti_1532075,
title = {Superlattice photodetector having improved carrier mobility},
author = {Kim, Jin K. and Klem, John F. and Shaner, Eric A. and Olson, Benjamin Varberg and Kadlec, Emil Andrew and Tauke-Pedretti, Anna M. and Fortune, Torben Ray},
abstractNote = {In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}
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