Atomic layer chemical patterns for block copolymer assembly
Abstract
Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Chicago, IL (United States); Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1532069
- Patent Number(s):
- 9927706
- Application Number:
- 15/215,016
- Assignee:
- The University of Chicago (Chicago, IL); Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08K - Use of inorganic or non-macromolecular organic substances as compounding ingredients
- DOE Contract Number:
- SC0006414
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016-07-20
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Nealey, Paul Franklin, Chang, Tzu-Hsuan, Xiong, Shisheng, Ma, Zhenqiang, Arnold, Michael Scott, and Jacobberger, Robert. Atomic layer chemical patterns for block copolymer assembly. United States: N. p., 2018.
Web.
Nealey, Paul Franklin, Chang, Tzu-Hsuan, Xiong, Shisheng, Ma, Zhenqiang, Arnold, Michael Scott, & Jacobberger, Robert. Atomic layer chemical patterns for block copolymer assembly. United States.
Nealey, Paul Franklin, Chang, Tzu-Hsuan, Xiong, Shisheng, Ma, Zhenqiang, Arnold, Michael Scott, and Jacobberger, Robert. Tue .
"Atomic layer chemical patterns for block copolymer assembly". United States. https://www.osti.gov/servlets/purl/1532069.
@article{osti_1532069,
title = {Atomic layer chemical patterns for block copolymer assembly},
author = {Nealey, Paul Franklin and Chang, Tzu-Hsuan and Xiong, Shisheng and Ma, Zhenqiang and Arnold, Michael Scott and Jacobberger, Robert},
abstractNote = {Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}
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