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Title: III-nitride transistor with trench gate

Abstract

A transistor includes a stack of III-nitride semiconductor layers, the stack having a frontside and a backside, a source electrode in contact with the frontside of the stack, a drain electrode in contact with the backside of the stack, a trench extending through a portion of the stack, the trench having a sidewall, and a gate structure formed in the trench, including an AlN layer formed on the sidewall of the trench, an insulating cap layer formed on the AlN layer, and a gate electrode formed on the insulator cap layer and covering the sidewall of the trench.

Inventors:
Issue Date:
Research Org.:
HRL Laboratories, LLC, Malibu, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532041
Patent Number(s):
9865725
Application Number:
15/099,390
Assignee:
HRL Laboratories, LLC (Malibu, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR000450
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016-04-14
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chu, Rongming. III-nitride transistor with trench gate. United States: N. p., 2018. Web.
Chu, Rongming. III-nitride transistor with trench gate. United States.
Chu, Rongming. Tue . "III-nitride transistor with trench gate". United States. https://www.osti.gov/servlets/purl/1532041.
@article{osti_1532041,
title = {III-nitride transistor with trench gate},
author = {Chu, Rongming},
abstractNote = {A transistor includes a stack of III-nitride semiconductor layers, the stack having a frontside and a backside, a source electrode in contact with the frontside of the stack, a drain electrode in contact with the backside of the stack, a trench extending through a portion of the stack, the trench having a sidewall, and a gate structure formed in the trench, including an AlN layer formed on the sidewall of the trench, an insulating cap layer formed on the AlN layer, and a gate electrode formed on the insulator cap layer and covering the sidewall of the trench.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}

Patent:

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