Title: III-nitride transistor with trench gate

Abstract

A transistor includes a stack of III-nitride semiconductor layers, the stack having a frontside and a backside, a source electrode in contact with the frontside of the stack, a drain electrode in contact with the backside of the stack, a trench extending through a portion of the stack, the trench having a sidewall, and a gate structure formed in the trench, including an AlN layer formed on the sidewall of the trench, an insulating cap layer formed on the AlN layer, and a gate electrode formed on the insulator cap layer and covering the sidewall of the trench.

Inventors:

Chu, Rongming

Issue Date:

2018-01-09

Research Org.:

HRL Laboratories, LLC, Malibu, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1532041

Patent Number(s):

9865725

Application Number:

15/099,390

Assignee:

HRL Laboratories, LLC (Malibu, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02178 - {the material containing aluminium, e.g. Al2O3}
H01L21/02266 - {deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition}
H01L21/02271 - {deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L29/0847 - {of field-effect transistors with insulated gate
H01L29/1037 - {and non-planar channel
H01L29/2003 - {Nitride compounds}
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/41741 - {for vertical or pseudo-vertical devices}
H01L29/4236 - {within a trench, e.g. trench gate electrode, groove gate electrode}
H01L29/513 - {the variation being perpendicular to the channel plane}
H01L29/66462 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}
H01L29/7788 - {Vertical transistors}
H01L29/7789 - {the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body}
H01L29/7813 - {with trench gate electrode, e.g. UMOS transistors
H01L29/7828 - {without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs}

Show less

DOE Contract Number:  

AR000450

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016-04-14

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING