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Title: Room temperature tunneling switches and methods of making and using the same

Abstract

The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.

Inventors:
Issue Date:
Research Org.:
Michigan Technological Univ., Houghton, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532037
Patent Number(s):
9,825,154
Application Number:
14/359,818
Assignee:
Michigan Technological University (Houghton, MI)
DOE Contract Number:  
FG02-06ER46294
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012-11-28
Country of Publication:
United States
Language:
English

Citation Formats

Yap, Yoke Khin. Room temperature tunneling switches and methods of making and using the same. United States: N. p., 2017. Web.
Yap, Yoke Khin. Room temperature tunneling switches and methods of making and using the same. United States.
Yap, Yoke Khin. Tue . "Room temperature tunneling switches and methods of making and using the same". United States. https://www.osti.gov/servlets/purl/1532037.
@article{osti_1532037,
title = {Room temperature tunneling switches and methods of making and using the same},
author = {Yap, Yoke Khin},
abstractNote = {The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}

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Works referenced in this record:

Single electron tunnel device and method for fabricating the same
patent, March 1998


Field effect transistor
patent, September 2004