Title: Room temperature tunneling switches and methods of making and using the same

Abstract

The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.

Inventors:

Yap, Yoke Khin

Issue Date:

Tue Nov 21 00:00:00 EST 2017

Research Org.:

Michigan Technological Univ., Houghton, MI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1532037

Patent Number(s):

9825154

Application Number:

14/359,818

Assignee:

Michigan Technological University (Houghton, MI)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
H01L29/068 - {comprising a junction}
H01L29/1029 - {of field-effect transistors}
H01L29/1033 - {with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
H01L29/127 - {Quantum box structures}
H01L29/2003 - {Nitride compounds}
H01L29/66977 - {Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects}
H01L29/775 - with one dimensional charge carrier gas channel, e.g. quantum wire FET

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DOE Contract Number:  

FG02-06ER46294

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012-11-28

Country of Publication:

United States

Language:

English