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Title: Room temperature tunneling switches and methods of making and using the same

Abstract

The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.

Inventors:
Issue Date:
Research Org.:
Michigan Technological Univ., Houghton, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532037
Patent Number(s):
9825154
Application Number:
14/359,818
Assignee:
Michigan Technological University (Houghton, MI)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-06ER46294
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012-11-28
Country of Publication:
United States
Language:
English

Citation Formats

Yap, Yoke Khin. Room temperature tunneling switches and methods of making and using the same. United States: N. p., 2017. Web.
Yap, Yoke Khin. Room temperature tunneling switches and methods of making and using the same. United States.
Yap, Yoke Khin. Tue . "Room temperature tunneling switches and methods of making and using the same". United States. https://www.osti.gov/servlets/purl/1532037.
@article{osti_1532037,
title = {Room temperature tunneling switches and methods of making and using the same},
author = {Yap, Yoke Khin},
abstractNote = {The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}

Works referenced in this record:

Carbon nanotube field effect transistor
patent-application, September 2009


Single electron tunnel device and method for fabricating the same
patent, March 1998


Field effect transistor
patent, September 2004


Tunable Spectroscopic Enhancement Via Transformation of Electroless Plating Into Metal Films with Predictably Adjustable Optical Features
patent-application, August 2009


Method of fabricating memory device utilizing carbon nanotubes
patent-application, November 2006


Manufacture method for ZnO based semiconductor crystal and light emitting device using same
patent-application, July 2010


Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
patent-application, October 2006


Organic Field Effect Transistor
patent-application, May 2009


Field effect transistor and manufacturing method thereof
patent-application, June 2005