Title: Patterning devices using fluorinated compounds

Abstract

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Inventors:

Katz, Howard E.; Dhar, Bal Mukund

Issue Date:

2017-10-31

Research Org.:

Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1532032

Patent Number(s):

9806259

Application Number:

15/226,411

Assignee:

The Johns Hopkins University (Baltimore, MD)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0545 - {Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode}
H01L51/52 - Details of devices

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

G03F7/70058 - {Mask illumination systems}
G03F7/0035 - {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0023 - {Patterning of conductive layers}
H01L51/0014 - {for changing the shape of the device layer, e.g. patterning}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/549 - organic PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0541 - {Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode}
H01L51/0018 - {using photolithographic techniques}
H01L51/0097 - {flexible substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/24479 - including variation in thickness

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/102 - {Electrodes}

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DOE Contract Number:  

FA9550-06-1-0076; FG02-07ER46465

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016-08-02

Country of Publication:

United States

Language:

English