Voltage-controlled magnetic devices

Wang, Weigang; Bi, Chong

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Title: Voltage-controlled magnetic devices

Abstract

Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.

Inventors:: Wang, Weigang; Bi, Chong

Issue Date:: Tue Oct 03 00:00:00 EDT 2017

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1532027

Patent Number(s):: 9779865

Application Number:: 14/885,609

Assignee:: The Arizona Board of Regents on Behalf of the University of Arizona (Tucson, AZ)

Patent Classifications (CPCs):: G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS

Show more

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C11/15 - using multiple magnetic layers
G11C11/161 - {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
G11C11/1675 - {Writing or programming circuits or methods}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
H01F21/08 - by varying the permeability of the core, e.g. by varying magnetic bias
H01F27/2804 - {Printed windings}
H01F7/04 - Means for releasing the attractive force

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01Q - ANTENNAS, i.e. RADIO AERIALS
H01Q7/06 - with core of ferromagnetic material

Show less

DOE Contract Number:: AC02-06CH11357; ECCS-1310338; HR0011-13-3-0002

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015-10-16

Country of Publication:: United States

Language:: English

Citation Formats


                    Wang, Weigang, and Bi, Chong. Voltage-controlled magnetic devices.  United States: N. p., 2017. 
        Web.

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                    Wang, Weigang, & Bi, Chong. Voltage-controlled magnetic devices.  United States.

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                    Wang, Weigang, and Bi, Chong. Tue .  
        "Voltage-controlled magnetic devices".  United States.  https://www.osti.gov/servlets/purl/1532027.

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@article{osti_1532027,

  title        = {Voltage-controlled magnetic devices},

  author       = {Wang, Weigang and Bi, Chong},

  abstractNote = {Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Oct 03 00:00:00 EDT 2017},

  month        = {Tue Oct 03 00:00:00 EDT 2017}

}

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Similar Records

Title: Voltage-controlled magnetic devices

Abstract

Citation Formats

Ring antennas for resonant circuits patent, January 1999

Thin film magnetic head responsive to spin-dependent scattering patent, May 1999

Magnetoresistive effect head patent, August 1999

Magnetic memory coincident thermal pulse data storage patent, March 2003

Fabrication of a magnetoresistance sensor structure having a spacer layer produced by multiple deposition and oxidation steps patent, November 2003

Error detection and correction method and apparatus in a magnetoresistive random access memory patent, March 2004

Tunneling magnetoresistive head and a process of tunneling magnetoresistive head patent, March 2004

Spin transistor magnetic random access memory device patent, June 2004

Nanoelectric memristor device with dilute magnetic semiconductors patent, August 2013

Three-dimensional magnetic circuits including magnetic connectors patent, January 2015

Read out scheme for several bits in a single MRAM soft layer patent-application, January 2006

Thermally written magnetic memory device patent-application, January 2006

MRAM with improved storage and read out characteristics patent-application, March 2006

Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect patent-application,

STT-MRAM Cell Structure Incorporating Piezoelectric Stress Material patent-application, April 2008

Magnetic Stack with Oxide to Reduce Switching Current patent-application, April 2010

Magnetic Domain Wall Random Access Memory patent-application, August 2010

Method for Manufacturing Nonvolatile Memory Device patent-application, January 2013

Magnetoresistive Device and a Writing Method for a Magnetoresistive Device patent-application, March 2013

Magnetoresistive random access memory cell with independently operating read and write components patent-application, May 2013

Magnetoresistive Logic Cell and Method of Use patent-application, August 2013

Magnetoresistive random access memory cell design patent-application, October 2013

Computing Multi-Magnet Based Devices and Methods for Solution of Optimization Problems patent-application, February 2014

Nonvolatile Memory Device patent-application, March 2014

Voltage-Controlled Magnetic Memory element with Canted Magnetization patent-application, June 2014

Electric Field Assisted MRAM and Method for Using the Same patent-application, June 2014

Tunnel Magnetoresistive Effect Element and Random Access Memory Using Same patent-application, November 2014

Method of Operating Semiconductor Memory Device patent-application, June 2015

Ring antennas for resonant circuits
patent, January 1999

Thin film magnetic head responsive to spin-dependent scattering
patent, May 1999

Magnetoresistive effect head
patent, August 1999

Magnetic memory coincident thermal pulse data storage
patent, March 2003

Fabrication of a magnetoresistance sensor structure having a spacer layer produced by multiple deposition and oxidation steps
patent, November 2003

Error detection and correction method and apparatus in a magnetoresistive random access memory
patent, March 2004

Tunneling magnetoresistive head and a process of tunneling magnetoresistive head
patent, March 2004

Spin transistor magnetic random access memory device
patent, June 2004

Nanoelectric memristor device with dilute magnetic semiconductors
patent, August 2013

Three-dimensional magnetic circuits including magnetic connectors
patent, January 2015

Read out scheme for several bits in a single MRAM soft layer
patent-application, January 2006

Thermally written magnetic memory device
patent-application, January 2006

MRAM with improved storage and read out characteristics
patent-application, March 2006

Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
patent-application,

STT-MRAM Cell Structure Incorporating Piezoelectric Stress Material
patent-application, April 2008

Magnetic Stack with Oxide to Reduce Switching Current
patent-application, April 2010

Magnetic Domain Wall Random Access Memory
patent-application, August 2010

Method for Manufacturing Nonvolatile Memory Device
patent-application, January 2013

Magnetoresistive Device and a Writing Method for a Magnetoresistive Device
patent-application, March 2013

Magnetoresistive random access memory cell with independently operating read and write components
patent-application, May 2013

Magnetoresistive Logic Cell and Method of Use
patent-application, August 2013

Magnetoresistive random access memory cell design
patent-application, October 2013

Computing Multi-Magnet Based Devices and Methods for Solution of Optimization Problems
patent-application, February 2014

Nonvolatile Memory Device
patent-application, March 2014

Voltage-Controlled Magnetic Memory element with Canted Magnetization
patent-application, June 2014

Electric Field Assisted MRAM and Method for Using the Same
patent-application, June 2014

Tunnel Magnetoresistive Effect Element and Random Access Memory Using Same
patent-application, November 2014

Method of Operating Semiconductor Memory Device
patent-application, June 2015