Transparent group III metal nitride and method of manufacture

Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P.

Title: Transparent group III metal nitride and method of manufacture

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Abstract

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Inventors:: Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P.

Issue Date:: 2017-01-10

Research Org.:: Soraa, Inc., Fremont, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531968

Patent Number(s):: 9543392

Application Number:: 14/485,516

Assignee:: Soraa, Inc. (Fremont, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02647 - {Lateral overgrowth}
H01L21/02642 - {Mask materials other than SiO2 or SiN}
H01L21/0237 - {Materials}
H01L29/2003 - {Nitride compounds}
H01L33/025 - {Physical imperfections, e.g. particular concentration or distribution of impurities}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/406 - {Gallium nitride}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/0075 - {comprising nitride compounds}
H01L29/045 - {by their particular orientation of crystalline planes}
H01L33/32 - containing nitrogen
H01L21/02433 - {Crystal orientation}
H01L21/02389 - {Nitrides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B7/105 - {using ammonia as solvent, i.e. ammonothermal processes}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/36 - characterised by the concentration or distribution of impurities {in the bulk material

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/403 - {AIII-nitrides}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0254 - {Nitrides}
H01L21/02458 - {Nitrides}

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DOE Contract Number:: AR0000020; IIP-1026896

Resource Type:: Patent

Resource Relation:: Patent File Date: 2014-09-12

Country of Publication:: United States

Language:: English

Citation Formats


                    Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture.  United States: N. p., 2017. 
        Web.

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                    Jiang, Wenkan, Ehrentraut, Dirk, & D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture.  United States.

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                    Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Tue .  
        "Transparent group III metal nitride and method of manufacture".  United States.  https://www.osti.gov/servlets/purl/1531968.

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@article{osti_1531968,

  title        = {Transparent group III metal nitride and method of manufacture},

  author       = {Jiang, Wenkan and Ehrentraut, Dirk and D'Evelyn, Mark P.},

  abstractNote = {Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {1}

}

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