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Title: Transparent group III metal nitride and method of manufacture

Abstract

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Inventors:
; ;
Issue Date:
Research Org.:
Soraa, Inc., Fremont, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531968
Patent Number(s):
9543392
Application Number:
14/485,516
Assignee:
Soraa, Inc. (Fremont, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AR0000020; IIP-1026896
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014-09-12
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture. United States: N. p., 2017. Web.
Jiang, Wenkan, Ehrentraut, Dirk, & D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture. United States.
Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Tue . "Transparent group III metal nitride and method of manufacture". United States. https://www.osti.gov/servlets/purl/1531968.
@article{osti_1531968,
title = {Transparent group III metal nitride and method of manufacture},
author = {Jiang, Wenkan and Ehrentraut, Dirk and D'Evelyn, Mark P.},
abstractNote = {Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}

Patent:

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