Transparent group III metal nitride and method of manufacture
Abstract
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
- Inventors:
- Issue Date:
- Research Org.:
- Soraa, Inc., Fremont, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531968
- Patent Number(s):
- 9543392
- Application Number:
- 14/485,516
- Assignee:
- Soraa, Inc. (Fremont, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000020; IIP-1026896
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014-09-12
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture. United States: N. p., 2017.
Web.
Jiang, Wenkan, Ehrentraut, Dirk, & D'Evelyn, Mark P. Transparent group III metal nitride and method of manufacture. United States.
Jiang, Wenkan, Ehrentraut, Dirk, and D'Evelyn, Mark P. Tue .
"Transparent group III metal nitride and method of manufacture". United States. https://www.osti.gov/servlets/purl/1531968.
@article{osti_1531968,
title = {Transparent group III metal nitride and method of manufacture},
author = {Jiang, Wenkan and Ehrentraut, Dirk and D'Evelyn, Mark P.},
abstractNote = {Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 10 00:00:00 EST 2017},
month = {Tue Jan 10 00:00:00 EST 2017}
}
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