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Title: Transistor having increased breakdown voltage

Abstract

A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.

Inventors:
; ;
Issue Date:
Research Org.:
International Rectifier Corp., El Segundo, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531916
Patent Number(s):
9,379,231
Application Number:
13/749,477
Assignee:
Infineon Technologies Americas Corp. (El Segundo, CA)
DOE Contract Number:  
AR0000016
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013-01-24
Country of Publication:
United States
Language:
English

Citation Formats

Briere, Michael A., Thapar, Naresh, and Garg, Reenu. Transistor having increased breakdown voltage. United States: N. p., 2016. Web.
Briere, Michael A., Thapar, Naresh, & Garg, Reenu. Transistor having increased breakdown voltage. United States.
Briere, Michael A., Thapar, Naresh, and Garg, Reenu. Tue . "Transistor having increased breakdown voltage". United States. https://www.osti.gov/servlets/purl/1531916.
@article{osti_1531916,
title = {Transistor having increased breakdown voltage},
author = {Briere, Michael A. and Thapar, Naresh and Garg, Reenu},
abstractNote = {A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

Patent:

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