Title: Transistor having increased breakdown voltage

Abstract

A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.

Inventors:

Briere, Michael A.; Thapar, Naresh; Garg, Reenu

Issue Date:

Tue Jun 28 00:00:00 EDT 2016

Research Org.:

International Rectifier Corp., El Segundo, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531916

Patent Number(s):

9379231

Application Number:

13/749,477

Assignee:

Infineon Technologies Americas Corp. (El Segundo, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/41758 - {for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
H01L29/42316 - {for field-effect transistors}
H01L29/4238 - {characterised by the surface lay-out}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}
H01L29/7788 - {Vertical transistors}
H01L29/78 - with field effect produced by an insulated gate {

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DOE Contract Number:  

AR0000016

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013-01-24

Country of Publication:

United States

Language:

English