Graphene layer formation on a carbon based substrate
Abstract
A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531899
- Patent Number(s):
- 8652946
- Application Number:
- 13/448,068
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012-04-16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sumant, Anirudha V., and Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States: N. p., 2014.
Web.
Sumant, Anirudha V., & Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States.
Sumant, Anirudha V., and Balandin, Alexander. Tue .
"Graphene layer formation on a carbon based substrate". United States. https://www.osti.gov/servlets/purl/1531899.
@article{osti_1531899,
title = {Graphene layer formation on a carbon based substrate},
author = {Sumant, Anirudha V. and Balandin, Alexander},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {2}
}
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