Title: Graphene layer formation on a carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:

Sumant, Anirudha V.; Balandin, Alexander

Issue Date:

2014-02-18

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531899

Patent Number(s):

8652946

Application Number:

13/448,068

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/02491 - {Conductive materials}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02376 - {Carbon, e.g. diamond-like carbon}
H01L21/02658 - {Pretreatments
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02488 - {Insulating materials}

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DOE Contract Number:  

AC02-06CH11357; W-31-109-ENG-38

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012-04-16

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE