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Title: Graphene layer formation on a carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531899
Patent Number(s):
8,652,946
Application Number:
13/448,068
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357; W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012-04-16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., and Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States: N. p., 2014. Web.
Sumant, Anirudha V., & Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States.
Sumant, Anirudha V., and Balandin, Alexander. Tue . "Graphene layer formation on a carbon based substrate". United States. https://www.osti.gov/servlets/purl/1531899.
@article{osti_1531899,
title = {Graphene layer formation on a carbon based substrate},
author = {Sumant, Anirudha V. and Balandin, Alexander},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {2}
}

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Works referenced in this record:

Devices with graphene layers
patent, August 2010


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