Graphene layer formation on a carbon based substrate
Abstract
A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531899
- Patent Number(s):
- 8652946
- Application Number:
- 13/448,068
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012-04-16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sumant, Anirudha V., and Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States: N. p., 2014.
Web.
Sumant, Anirudha V., & Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States.
Sumant, Anirudha V., and Balandin, Alexander. Tue .
"Graphene layer formation on a carbon based substrate". United States. https://www.osti.gov/servlets/purl/1531899.
@article{osti_1531899,
title = {Graphene layer formation on a carbon based substrate},
author = {Sumant, Anirudha V. and Balandin, Alexander},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 18 00:00:00 EST 2014},
month = {Tue Feb 18 00:00:00 EST 2014}
}
Works referenced in this record:
Graphene and hexagonal boron nitride planes and associated methods
patent-application, September 2010
- Sung, Chien-Min; Hu, Shao; Lin, I-Chiao
- US Patent Application 12/713004; 20100218801
Graphene on diamond devices and associated methods
patent-application, July 2012
- Sung, Chien-Min
- US Patent Application 13/343155; 20120181501
Film on graphene on a substrate and method and devices therefor
patent-application, June 2012
- Kub, Francis; Anderson, Travis; Mastro, Michael
- US Patent Application 13/310347; 20120141799
Devices with graphene layers
patent, August 2010
- Garcia, Jorge Manuel; Pfeiffer, Loren N.
- US Patent Document 7,781,061
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
patent-application, March 2011
- Caldwell, Joshua; Hobart, Karl; Anderson, Travis
- US Patent Application 12/855692; 20110048625
Grahene hybrid material and method for preparing same using chemical vapor deposition
patent-application, February 2009
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Works referencing / citing this record:
Graphene layer formation at low substrate temperature on a metal and carbon based substrate
patent, January 2018
- Sumant, Anirudha V.; Berman, Diana
- US Patent Document 9,875,894
Graphene layer formation at low substrate temperature on a metal and carbon based substrate
patent, December 2014
- Sumant, Anirudha V.
- US Patent Document 8,906,772
Graphene layer formation on a carbon based substrate
patent, December 2015
- Sumant, Anirudha V.; Balandin, Alexander A.
- US Patent Document 9,202,684
