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Title: Method for forming diffusion regions in a silicon substrate

Abstract

A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.

Inventors:
; ; ;
Issue Date:
Research Org.:
SunPower Corp., San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531886
Patent Number(s):
8,586,397
Application Number:
13/250,594
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011-09-30
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING

Citation Formats

Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, and Molesa, Steven Edward. Method for forming diffusion regions in a silicon substrate. United States: N. p., 2013. Web.
Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, & Molesa, Steven Edward. Method for forming diffusion regions in a silicon substrate. United States.
Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, and Molesa, Steven Edward. Tue . "Method for forming diffusion regions in a silicon substrate". United States. https://www.osti.gov/servlets/purl/1531886.
@article{osti_1531886,
title = {Method for forming diffusion regions in a silicon substrate},
author = {Wu, Kahn C. and Kraft, Steven M. and Loscutoff, Paul and Molesa, Steven Edward},
abstractNote = {A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

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Works referenced in this record:

Method of fabricating polysilicon emitters for solar cells
patent, October 1991


Radiation resistant passivation of silicon solar cells
patent, July 1991


Printed non-volatile memory
patent, May 2010


Process for continuously producing an aromatic polyimide film
patent, September 1984


Printed dopant layers
patent, August 2010


Metal inks for improved contact resistance
patent, July 2011


Bilevel contact solar cells
patent, October 1991


Technique for the removal of residual spin-on-glass (SOG) after full SOG etchback
patent, May 1998


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