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Title: Micropores and methods of making and using thereof

Abstract

Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531885
Patent Number(s):
8585916
Application Number:
12/812,986
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009-01-21
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 59 BASIC BIOLOGICAL SCIENCES

Citation Formats

Perroud, Thomas D., Patel, Kamlesh D., and Meagher, Robert J. Micropores and methods of making and using thereof. United States: N. p., 2013. Web.
Perroud, Thomas D., Patel, Kamlesh D., & Meagher, Robert J. Micropores and methods of making and using thereof. United States.
Perroud, Thomas D., Patel, Kamlesh D., and Meagher, Robert J. Tue . "Micropores and methods of making and using thereof". United States. https://www.osti.gov/servlets/purl/1531885.
@article{osti_1531885,
title = {Micropores and methods of making and using thereof},
author = {Perroud, Thomas D. and Patel, Kamlesh D. and Meagher, Robert J.},
abstractNote = {Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

Patent:

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